SPICE MODELS: BSS138DW
BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
Low On-Resistance
A
Low Gate Threshold Voltage
SOT-363
D2
G1
S1
Low Input Capacitance
Dim
A
Min
0.10
1.15
2.00
Max
0.30
1.35
2.20
Fast Switching Speed
C
B
Available in Lead Free/RoHS Compliant Version (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
B
S2
G2
D1
C
G
H
Mechanical Data
·
·
D
0.65 Nominal
Case: SOT-363
F
0.30
1.80
¾
0.40
2.20
0.10
1.00
0.40
0.25
8°
K
J
M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
H
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
J
L
D
F
Terminals: Solderable per MIL-STD-202, Method 208
K
0.90
0.25
0.10
0°
D2
G1
S1
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
L
M
a
·
·
·
·
Terminal Connections: See Diagram
Marking Code (See Page 2): K38
All Dimensions in mm
S2
G2
D1
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
VDGR
VGSS
ID
BSS138DW
Units
V
50
50
Drain-Source Voltage
V
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Continuous
Continuous
±20
V
mA
mW
°C/W
°C
Drain Current (Note 1)
200
Pd
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
200
RqJA
625
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 250mA
VDS = 50V, VGS = 0V
GS = ±20V, VDS = 0V
50
¾
¾
75
¾
¾
¾
0.5
V
µA
nA
IGSS
V
±100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250mA
0.5
¾
1.2
1.4
¾
1.5
3.5
¾
V
W
VGS = 10V, ID = 0.22A
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS =25V, ID = 0.2A, f = 1.0KHz
100
mS
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8.0
tD(ON)
¾
¾
¾
¾
20
20
ns
ns
VDD = 30V, ID = 0.2A,
RGEN = 50W
tD(OFF)
Turn-Off Delay Time
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3.
R
£ 20KW.
GS
4. No purposefully added lead.
DS30203 Rev. 8 - 2
1 of 5
BSS138DW
www.diodes.com
ã Diodes Incorporated
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