BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Available in Lead Free/RoHS Compliant Version (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 5 and 6)
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Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound
(Note 6). UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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SOT-363
D2
G1
S1
S2
G2
D1
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VDGR
VGSS
ID
BSS138DW
Units
V
50
50
Drain-Gate Voltage (Note 3)
V
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Continuous
V
±20
200
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
PD
Rθ
BSS138DW
200
Units
mW
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
625
°C/W
°C
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
50
⎯
⎯
75
⎯
⎯
V
µA
nA
BVDSS
IDSS
IGSS
⎯
0.5
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
±100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.5
⎯
100
1.2
1.4
⎯
1.5
3.5
⎯
V
Ω
mS
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.22A
VDS =25V, ID = 0.2A, f = 1.0KHz
50
25
8.0
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
20
20
ns
tD(ON)
tD(OFF)
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.2A,
Turn-Off Delay Time
ns RGEN = 50Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. RGS ≤ 20KΩ.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
1 of 5
www.diodes.com
September 2009
© Diodes Incorporated
BSS138DW
Document number: DS30203 Rev. 12 - 2
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