Datasheet > BSR58LT1/D

BSR58LT1/D

更新时间： 2024-11-12 23:35:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	105K
描述
JFET Chopper Transistor

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中文翻译

获取价格

数据手册

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BSR58LT1/D 数据手册

BSR58LT1

JFET Chopper Transistor

N–Channel – Depletion

MAXIMUM RATINGS

http://onsemi.com

Rating

Drain–Gate Voltage

Symbol

Value

–40

–35

Unit

Vdc

2 SOURCE

Gate–Source Voltage

Gate Current

Vdc

mAdc

GATE

Total Device Dissipation

@ T = 25°C

350

2.8

mW/°C

Derate above 25°C

1 DRAIN

Lead Temperature

300

°C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

SOT–23

CASE 318

STYLE 10

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

(I = –1.0 µAdc)

–

Vdc

nAdc

Vdc

(BR)GSS

MARKING DIAGRAM

Gate Reverse Current

(V = –15 Vdc)

–ā1.0

GSS

Gate Source Cutoff Voltage

–0.8 –4.0

GS(off)

(V = 5.0 Vdc, I = 1.0 µAdc)

Drain–Cutoff Current

(V = 5.0 Vdc, V = –10 Vdc)

–

1.0

nAdc

D(off)

M6 = Specific Device Code

M6 = Date Code

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

(Note 1)

8.0

mAdc

DSS

(V = 15 Vdc)

ORDERING INFORMATION

Static Drain–Source On Resistance

(V = 0.1 Vdc)

–

Ω

DS(on)

Device

BSR58LT1

Package

Shipping

3000/Tape & Reel

Drain Gate and Source Gate

On–Capacitance

dg(on)

SOT–23

(V = V = 0, f = 1.0 MHz)

sg(on)

Drain Gate Off–Capacitance

–

5.0

dg(off)

(V = –10 Vdc, f = 1.0 MHz)

Source Gate Off–Capacitance

sg(off)

(V = –10 Vdc, f = 1.0 MHz)

1. Pulse Width = 300 µs, Duty Cycle = 3.0%.

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

March, 2002 – Rev. 0

BSR58LT1/D

12 3 4

中文翻译

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