生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.19 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.5 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP106 | NXP |
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N-channel enhancement mode vertical D-MOS transistor | |
BSP106 | YAGEO |
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Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
BSP106115 | NXP |
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TRANSISTOR 425 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSP106135 | NXP |
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TRANSISTOR 425 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSP106-T | NXP |
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暂无描述 | |
BSP106T/R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 500MA I(D) | SOT-223 | |
BSP106-TAPE-13 | NXP |
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TRANSISTOR 0.425 A, 60 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP106-TAPE-7 | NXP |
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TRANSISTOR 0.425 A, 60 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP106TRL | NXP |
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TRANSISTOR 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSP106TRL13 | YAGEO |
获取价格 |
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal |