生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.5 A | 最大漏源导通电阻: | 5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP107 | NXP |
获取价格 |
N-channel enhancement mode vertical D-MOS transistor | |
BSP107135 | NXP |
获取价格 |
TRANSISTOR Si, POWER, FET, FET General Purpose Power | |
BSP107-T | NXP |
获取价格 |
TRANSISTOR 0.2 A, 200 V, 28 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP107T/R | NXP |
获取价格 |
TRANSISTOR 0.2 A, 200 V, 28 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, | |
BSP107-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 0.2 A, 200 V, 28 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP107-TAPE-7 | NXP |
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TRANSISTOR 0.2 A, 200 V, 28 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BSP107TRL | NXP |
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TRANSISTOR 200 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BSP107TRL13 | NXP |
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TRANSISTOR 200 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
BSP108 | NXP |
获取价格 |
N-channel enhancement mode vertical D-MOS transistor | |
BSP108135 | NXP |
获取价格 |
TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si |