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BSL316CH6327XTSA1 PDF预览

BSL316CH6327XTSA1

更新时间: 2024-11-09 14:41:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网光电二极管晶体管
页数 文件大小 规格书
13页 475K
描述
Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6

BSL316CH6327XTSA1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:10 weeks
风险等级:1.68Is Samacsys:N
其他特性:AVALANCHE RATED配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):1.5 A
最大漏极电流 (ID):1.4 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):7 pF
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):0.5 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BSL316CH6327XTSA1 数据手册

 浏览型号BSL316CH6327XTSA1的Datasheet PDF文件第2页浏览型号BSL316CH6327XTSA1的Datasheet PDF文件第3页浏览型号BSL316CH6327XTSA1的Datasheet PDF文件第4页浏览型号BSL316CH6327XTSA1的Datasheet PDF文件第5页浏览型号BSL316CH6327XTSA1的Datasheet PDF文件第6页浏览型号BSL316CH6327XTSA1的Datasheet PDF文件第7页 
BSL316C  
OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor  
Product Summary  
Features  
P
N
· Complementary P + N channel  
VDS  
-30  
150  
270  
-1.5  
30  
160  
280  
1.4  
V
· Enhancement mode  
RDS(on),max  
VGS=±10 V  
mW  
· Logic level (4.5V rated)  
· Avalanche rated  
VGS=±4.5 V  
ID  
A
· Qualified according to AEC Q101  
· 100% lead-free; RoHS compliant  
· Halogen free according to IEC61249-2-21  
PG-TSOP6  
Type  
Package  
Tape and Reel Information  
H6327: 3000 pcs / reel  
Marking  
Lead Free  
Packing  
BSL316C  
PG-TSOP-6  
sPJ  
Yes  
Non dry  
Maximum ratings, at T j=25 °C, unless otherwise specified 1)  
Value  
Parameter  
Symbol Conditions  
Unit  
P
N
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
Continuous drain current  
-1.5  
-1.2  
-6.0  
1.4  
A
1.1  
5.6  
I D,pulse  
Pulsed drain current  
P: I D=-1.5 A,  
N: I D=1.4 A,  
R GS=25 W  
EAS  
Avalanche energy, single pulse  
11  
3.7  
mJ  
VGS  
±20  
0.5  
Gate source voltage  
V
Power dissipation1)  
Ptot  
T A=25 °C  
W
°C  
T j, T stg  
-55 ... 150  
0 (<250V)  
260  
Operating and storage temperature  
ESD class  
JESD22-A114-HBM  
T solder  
Soldering temperature  
IEC climatic category; DIN IEC 68-1  
°C  
55/150/56  
1) Remark: only one of both transistors active  
Rev. 2.3  
page 1  
2014-07-21  

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