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BSL802SNH6327 PDF预览

BSL802SNH6327

更新时间: 2024-11-09 14:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网光电二极管晶体管
页数 文件大小 规格书
9页 304K
描述
Small Signal Field-Effect Transistor, 7.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6

BSL802SNH6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.8
其他特性:AVALANCHE RATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):7.5 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):77 pFJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
参考标准:AEC-Q101表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSL802SNH6327 数据手册

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BSL802SN  
OptiMOS™2 Small-Signal-Transistor  
Features  
Product Summary  
VDS  
RDS(on),max  
20  
22  
31  
7.5  
V
• N-channel  
VGS=2.5 V  
VGS=1.8 V  
mW  
• Enhancement mode  
• Ultra Logic level (1.8V rated)  
ID  
A
• Avalanche rated  
• Qualified according to AEC Q101  
• 100% lead-free; RoHS compliant  
PG-TSOP6  
6
5
• Halogen free according to IEC61249-2-21  
4
1
2
3
Type  
Package  
Tape and Reel Information  
Marking  
sPP  
Lead Free  
Packing  
BSL802SN PG-TSOP6 H6327: 3000 pcs/ reel  
Yes  
Non dry  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
Continuous drain current  
7.5  
6.0  
30  
A
I D,pulse  
Pulsed drain current  
E AS  
I D=7.5 A, R GS=25 W  
Avalanche energy, single pulse  
30  
6
mJ  
I D=7.5 A, V DS=16 V,  
di /dt =200 A/µs,  
T j,max=150 °C  
Reverse diode dv /dt  
dv /dt  
kV/µs  
V GS  
Gate source voltage  
±8  
V
Power dissipation 1)  
P tot  
T A=25 °C  
2
W
°C  
T j, T stg  
Operating and storage temperature  
ESD Class  
-55 ... 150  
0 (<250V)  
260 °C  
55/150/56  
JESD22-A114 -HBM  
Soldering Temperature  
IEC climatic category; DIN IEC 68-1  
Rev 2.3  
page 1  
2013-11-07  

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