Datasheet > BSB104N08NP3GXUSA1

BSB104N08NP3GXUSA1

更新时间： 2024-09-26 03:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	597K
描述
Power Field-Effect Transistor, 13A I(D), 80V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3

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BSB104N08NP3 G

OptiMOS™3 Power-MOSFET

Product Summary

Features

10.4

V_DS

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

R_DS(on),max

I_D

• Low profile (<0.7mm)

• Dual sided cooling

CanPAK^TM

MG-WDSON-2

• Low parasitic inductance

• N-channel, normal level

Type

Package

Outline

Marking

0308

BSB104N08NP3 G

MG-WDSON-2

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

Continuous drain current

V _GS=10 V, T _C=100 °C

V _GS=10 V, T _A=25 °C,

R _thJA=45 K/W¹⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

200

110

±20

Avalanche energy, single pulse³⁾

Gate source voltage

I _D=30 A, R _GS=25 W

V _GS

¹⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

²⁾See figure 3 for more detailed information

³⁾See figure 13 for more detailed information

Rev. 2.1

page 1

2013-11-28

12 3 4 5 6 7...11

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