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BS817-7 PDF预览

BS817-7

更新时间: 2024-11-24 21:16:47
品牌 Logo 应用领域
美台 - DIODES 光电二极管晶体管
页数 文件大小 规格书
2页 45K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTC PACKAGE-3

BS817-7 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.76配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.1 A
最大漏源导通电阻:50 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

BS817-7 数据手册

 浏览型号BS817-7的Datasheet PDF文件第2页 
BS817  
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR  
Features  
·
·
·
·
·
High Breakdown Voltage  
High Input Impedance  
Fast Switching Speed  
Specially Suited for Telephone Subsets  
Ideal for Automated Surface Mount Assembly  
SOT-23  
Dim  
A
Min  
0.37  
1.19  
2.10  
0.89  
0.45  
1.78  
2.65  
0.013  
0.89  
0.45  
0.076  
Max  
0.51  
1.40  
2.50  
1.05  
0.61  
2.05  
3.05  
0.15  
1.10  
0.61  
0.178  
A
D
B
TOP VIEW  
C
B
C
D
G
S
E
Mechanical Data  
D
G
E
G
H
·
·
Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections (see Diagram)  
Marking: S17  
Weight: 0.008 grams (approx.)  
H
J
M
K
K
·
·
·
L
J
L
M
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
-VDSS  
-VDGS  
VGS  
Value  
200  
200  
20  
Unit  
V
Drain-Source Voltage  
Drain-Gate Voltage  
V
Gate-Source Voltage (pulsed) (Note 2)  
Drain Current (continuous)  
V
-ID  
100  
310  
mA  
mW  
°C  
Power Dissipation @ TC = 50°C (Note 1)  
Operating and Storage Temperature Range  
Pd  
Tj, TSTG  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Inverse Diode  
Characteristic  
Symbol  
Value  
Unit  
IF  
Max Forward Current (continuous)  
0.3  
A
Forward Voltage Drop (typical)  
@ VGS = 0, IF = 0.3A, Tj = 25°C  
VF  
0.85  
V
2
Notes:  
1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm area.  
2. Pulse Test: Pulse width = 80µs, duty cycle = 1%.  
DS11401 Rev. D-3  
1 of 2  
www.diodes.com  
BS817  
ã Diodes Incorporated  

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