Datasheet > BS828

BS828

更新时间： 2024-11-26 22:27:55

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	240K
描述
DMOS Transistors (N-Channel)

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BS828 数据手册

BS828

DMOS Transistors (N-Channel)

FEATURES

SOT-23

♦

High breakdown voltage

High input impedance

High-speed switching

No minority carrier storage time

CMOS logic compatible input

No thermal runaway

No secondary breakdown

Specially suited for telephone subsets

.122 (3.1)

.118 (3.0)

.016 (0.4)

Top View

.037(0.95) .037(0.95)

MECHANICAL DATA

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g

Marking

Dimensions in inches and (millimeters)

S28

Pin configuration

1 = Gate, 2 = Source, 3 = Drain

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Value

240

Unit

Drain-Source Voltage

DSS

Drain-Gate Voltage

DGS

240

Gate-Source Voltage (pulsed)

Drain Current (continuous)

± 20

230

Power Dissipation at T = 50 °C

tot

0.310¹⁾

150

Junction Temperature

°C

Storage Temperature Range

¹⁾Device on fiberglass substrate, see layout

–65 to +150

Inverse Diode

Symbol

Value

0.3

Unit

Max. Forward Current (continuous)

at T

= 25 °C

amb

Forward Voltage Drop (typ.)

at V = 0, I = 0.3 A, T = 25 °C

0.85

4/98

12 3 4 5

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