是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LFBGA, BGA48,6X8,30 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
最长访问时间: | 70 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B48 | JESD-609代码: | e1 |
长度: | 12 mm | 内存密度: | 16777216 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 2MX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装等效代码: | BGA48,6X8,30 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 最小待机电流: | 1.5 V |
子类别: | SRAMs | 最大压摆率: | 0.037 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7) | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS62LV1603FIP55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit | |
BS62LV1603FIP70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit | |
BS62LV1605 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit | |
BS62LV1605EC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit | |
BS62LV1605EC55 | BSI |
获取价格 |
Standard SRAM, 2MX8, 55ns, CMOS, PDSO44 | |
BS62LV1605EC-55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit | |
BS62LV1605EC70 | BSI |
获取价格 |
Standard SRAM, 2MX8, 70ns, CMOS, PDSO44 | |
BS62LV1605EC-70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit | |
BS62LV1605ECG55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit | |
BS62LV1605ECG70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 2M X 8 bit |