5秒后页面跳转
BS616UV1010EI PDF预览

BS616UV1010EI

更新时间: 2024-11-12 22:21:23
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
10页 217K
描述
Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit

BS616UV1010EI 数据手册

 浏览型号BS616UV1010EI的Datasheet PDF文件第2页浏览型号BS616UV1010EI的Datasheet PDF文件第3页浏览型号BS616UV1010EI的Datasheet PDF文件第4页浏览型号BS616UV1010EI的Datasheet PDF文件第5页浏览型号BS616UV1010EI的Datasheet PDF文件第6页浏览型号BS616UV1010EI的Datasheet PDF文件第7页 
Ultra Low Power/Voltage CMOS SRAM  
64K X 16 bit  
BSI  
BS616UV1010  
„ DESCRIPTION  
„ FEATURES  
• Ultra low operation voltage : 1.8 ~ 3.6V  
• Ultra low power consumption :  
The BS616UV1010 is a high performance, ultra low power CMOS Static  
Random Access Memory organized as 65,536 words by 16 bits and  
operates from a wide range of 1.8V to 3.6V supply voltage.  
Advanced CMOS technology and circuit techniques provide both high  
speed and low power features with a typical CMOS standby current  
of 0.01uA and maximum access time of 150ns in 2V operation.  
Easy memory expansion is provided by an active LOW chip  
enable(CE) and active LOW output enable(OE) and three-state output  
drivers.  
Vcc = 2.0V  
C-grade : 10mA (Max.) operating current  
I- grade : 15mA (Max.) operating current  
0.01uA (Typ.) CMOS standby current  
C-grade : 15mA (Max.) operating current  
I- grade : 20mA (Max.) operating current  
0.02uA (Typ.) CMOS standby current  
Vcc = 3.0V  
• High speed access time :  
-15  
150ns (Max.) at Vcc = 3.0V  
The BS616UV1010 has an automatic power down feature, reducing the  
power consumption significantly when chip is deselected.  
The BS616UV1010 is available in the JEDEC standard 44-pin TSOP  
Type II and 48-pin mini-BGA.  
• Input levels are CMOS-compatible  
• Automatic power down when chip is deselected  
• Three state outputs and TTL compatible  
• Fully static operation  
• Data retention supply voltage as low as 1.5V  
• Easy expansion with CE and OE options  
• I/O Configuration x8/x16 selectable by LB and UB pin  
„ PRODUCT FAMILY  
POWER DISSIPATION  
SPEED  
(ns)  
STANDBY  
Operating  
PRODUCT  
FAMILY  
OPERATING  
Vcc  
PKG TYPE  
(ICCSB1, Max)  
(ICC, Max)  
TEMPERATURE  
RANGE  
Vcc=3.0V  
Vcc=3.0V  
Vcc=2.0V  
Vcc=3.0V  
Vcc=2.0V  
BS616UV1010EC  
BS616UV1010AC  
TSOP2-44  
+0O C to +70O  
-40 O C to +85O  
C
C
1.8V ~ 3.6V  
1.8V ~ 3.6V  
150  
0.5uA  
1.5uA  
0.3uA  
15mA  
20mA  
10mA  
BGA-48-0608  
BS616UV1010EI  
BS616UV1010AI  
TSOP2-44  
BGA-48-0608  
150  
1uA  
15mA  
„ PIN CONFIGURATIONS  
„ BLOCK DIAGRAM  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
A5  
A6  
A7  
OE  
UB  
LB  
2
A3  
3
A2  
4
A1  
5
A8  
A0  
6
CE  
A13  
A15  
7
DQ0  
DQ15  
DQ14  
DQ13  
DQ12  
GND  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
Address  
8
DQ1  
18  
512  
9
DQ2  
A14  
A12  
A7  
Input  
10  
Row  
DQ3  
BS616UV1010EC  
Memory Array  
512 x 2048  
11  
VCC  
12  
BS616UV1010EI  
GND  
Buffer  
13  
Decoder  
DQ4  
14  
A6  
A5  
A4  
DQ5  
15  
DQ6  
16  
DQ7  
17  
WE  
18  
A15  
2048  
A8  
19  
A14  
A9  
Data  
20  
A13  
A10  
16  
16  
16  
Column I/O  
21  
Input  
A12  
A11  
DQ0  
22  
NC  
NC  
Buffer  
.
.
.
.
.
.
.
.
Write Driver  
Sense Amp  
1
2
3
4
5
6
128  
Data  
16  
A
B
C
D
E
F
LB  
OE  
UB  
A0  
A3  
A1  
A4  
A2  
NC  
IO0  
IO2  
VCC  
VSS  
IO6  
IO7  
NC  
Output  
Buffer  
Column Decoder  
DQ15  
IO8  
CE  
14  
CE  
WE  
OE  
UB  
IO9  
IO10  
IO11  
IO12  
IO13  
NC  
A5  
A6  
IO1  
IO3  
IO4  
IO5  
WE  
A11  
Control  
Address Input Buffer  
VSS  
VCC  
IO14  
IO15  
NC  
NC  
NC  
A14  
A12  
A9  
A7  
LB  
A11 A9 A3 A2 A1  
A0 A10  
NC  
A15  
A13  
A10  
Vcc  
Gnd  
G
H
A8  
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.  
Revision 2.2  
April 2001  
R0201-BS616UV1010  
1

与BS616UV1010EI相关器件

型号 品牌 获取价格 描述 数据表
BS616UV1010EI10 BSI

获取价格

Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010EI15 BSI

获取价格

Standard SRAM, 64KX16, 150ns, CMOS, PDSO44
BS616UV1010EIC-10 BSI

获取价格

SRAM
BS616UV1010EICG10 BSI

获取价格

SRAM
BS616UV1010EICP10 BSI

获取价格

SRAM
BS616UV1010EIG10 BSI

获取价格

Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010EIG15 BSI

获取价格

Standard SRAM, 64KX16, 150ns, CMOS, PDSO44, TSOP2-44
BS616UV1010EII-10 BSI

获取价格

SRAM
BS616UV1010EIIG10 BSI

获取价格

SRAM
BS616UV1010EIIP10 BSI

获取价格

SRAM