Datasheet > BS616UV1620BC

BS616UV1620BC

更新时间： 2024-11-12 22:21:23

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
12页	216K
描述
Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

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BS616UV1620BC 数据手册

Ultra Low Power/Voltage CMOS SRAM

1M x 16 or 2M x 8 bit switchable

BSI

BS616UV1620

DESCRIPTION

FEATURES

The BS616UV1620 is a high performance, ultra low power CMOS Static

Random Access Memory organized as 1,048,676 words by 16 bits or

2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide

range of 1.8V to 2.3V supply voltage.

• Ultra low operation voltage : 1.8 ~ 2.3V

• Ultra low power consumption :

Vcc = 1.8V C-grade : 25mA (Max.) operating current

I- grade : 30mA (Max.) operating current

1.2uA (Typ.) CMOS standby current

• High speed access time :

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 1.2uA and maximum access time of 70/100ns in 2.0V operation.

This device provide three control inputs and three states output drivers

for easy memory expansion.

-70

70ns (Max.) at Vcc = 2.0V

-10 100ns (Max.) at Vcc = 2.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616UV1620 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616UV1620 is available in DICE form and 48-pin BGA type.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

(ICCSB1, Max)

(ICC, Max)

Vcc RANGE

PKG TYPE

TEMPERATURE

Vcc=2.0V

70 / 100

Vcc=2.0V

30uA

Vcc=2.0V

25mA

BS616UV1620BC

BS616UV1620FC

BS616UV1620BI

BS616UV1620FI

BGA-48-0810

BGA-48-0912

BGA-48-0810

BGA-48-0912

+0 ^OC to +70^O

-40 ^OC to +85^O

1.8V ~ 2.3V

40uA

30mA

BLOCK DIAGRAM

PIN CONFIGURATIONS

A19

A15

A14

A13

A12

A11

A10

Address

Input

CE2

4096

Row

Memory Array

4096 x 4096

Buffer

Decoder

CE1

A17

D10

4096

Data

16(8)

Column I/O

Input

Buffer

VSS

D11

A17

A19

A14

A12

VCC

VSS

Write Driver

Sense Amp

16(8)

256(512)

Data

VCC D12

A16

Output

Buffer

Column Decoder

D15

D14

D15

A18

D13

CI.O

A15

A13

A10

CE1

CE2

16(18)

Control

Address Input Buffer

CIO

A16 A0 A1 A2 A3

A18(SAE)

A11 SAE.

Vdd

Vss

48-Ball CSP top View

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.2

April 2001

R0201-BS616UV1620

12 3 4 5 6 7...12

中文翻译

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与BS616UV1620BC相关器件

型号	品牌	获取价格	描述	数据表
BS616UV1620BI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616UV1620FC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616UV1620FI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
BS616UV2011	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2011AC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2011AI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2011DC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2011DI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2011EC	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2011EI	BSI	获取价格	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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