Very Low Power CMOS SRAM
512K X 16 bit
BS616LV8017
Pb-Free and Green package materials are compliant to RoHS
FEATURES
DESCRIPTION
y Wide VCC operation voltage : 2.4V ~ 5.5V
y Very low power consumption :
The BS616LV8017 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 8/50uA at Vcc=3/5V at 85OC and maximum access time of
55/70ns.
VCC = 3.0V
Operation current : 31mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 4/8uA (Max.) at 70/85OC
Operation current : 76mA (Max.) at 55ns
10mA (Max.) at 1MHz
VCC = 5.0V
Standby current : 25/50uA (Max.) at 70/85OC
y High speed access time :
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV8017 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8017 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
-55
-70
55ns(Max.) at VCC=3.0~5.5V
70ns(Max.) at VCC=2.7~5.5V
y Automatic power down when chip is deselected
y Easy expansion with CE and OE options
y I/O Configuration x8/x16 selectable by LB and UB pin.
y Three state outputs and TTL compatible
y Fully static operation
y Data retention supply voltage as low as 1.5V
POWER CONSUMPTION
POWER DISSIPATION
Operating
STANDBY
PRODUCT
FAMILY
OPERATING
PKG TYPE
(ICCSB1, Max)
(ICC, Max)
TEMPERATURE
VCC=5.0V
10MHz
VCC=3.0V
10MHz
VCC=5.0V VCC=3.0V
1MHz
9mA
fMax.
1MHz
fMax.
BS616LV8017DC
BS616LV8017EC
BS616LV8017FI
BS616LV8017EI
BS616LV8017FI
DICE
Commercial
25uA
50uA
4.0uA
8.0uA
39mA
40mA
75mA
1.5mA
19mA
20mA
30mA
TSOP II-44
BGA-48-0912
TSOP II-44
BGA-48-0912
+0OC to +70OC
Industrial
10mA
76mA
2mA
31mA
-40OC to +85OC
PIN CONFIGURATIONS
BLOCK DIAGRAM
A4
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A3
2
A6
A2
3
A7
A1
4
OE
A13
A12
A11
A0
5
UB
CE
6
LB
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A18
A17
A16
A15
A14
7
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
A8
8
A10
A9
A8
A7
A6
A5
A4
Address
Input
1024
Memory Array
10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Row
Decoder
BS616LV8017EC
BS616LV8017EI
Buffer
1024 x 8192
8192
A9
A10
A11
A12
A13
DQ0
.
.
.
.
.
.
Data
16
16
Column I/O
Input
.
.
.
.
.
.
Buffer
Write Driver
Sense Amp
16
16
Data
Output
Buffer
1
2
3
4
5
6
512
NC
A
B
C
D
E
F
LB
OE
A0
A1
A2
Column Decoder
DQ15
D8
D9
UB
D10
D11
D12
D13
NC
A3
A5
A4
A6
CE
D1
D0
D2
9
CE
WE
OE
UB
LB
Address Input Buffer
Control
VSS
VCC
D14
D15
A18
A17
NC
A14
A12
A9
A7
D3
VCC
VSS
D6
A14 A15 A16 A17 A18 A0 A1 A2 A3
VCC
VSS
A16
A15
A13
A10
D4
D5
G
H
WE
A11
D7
A8
NC
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS616LV8017
Revision
Oct.
2.4
1
2008