是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSSOP, TSSOP48,.71,20 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
最长访问时间: | 55 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G48 | JESD-609代码: | e0 |
内存密度: | 2097152 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
端子数量: | 48 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP48,.71,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.000001 A | 最小待机电流: | 1.5 V |
子类别: | SRAMs | 最大压摆率: | 0.025 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS616LV2019TI-55 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TI70 | BSI |
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Very Low Power CMOS SRAM 128K X 16 bit | |
BS616LV2019TI-70 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIG55 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIG70 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIP55 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIP70 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2020 | BSI |
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Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable | |
BS616LV2020AC | BSI |
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Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable | |
BS616LV2020AI | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |