Datasheet > BS616LV2025AC

BS616LV2025AC

更新时间： 2024-01-03 22:29:06

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	254K
描述
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BS616LV2025AC 数据手册

Very Low Power/Voltage CMOS SRAM

128K x 16 or 256K x 8 bit switchable

BSI

BS616LV2025

DESCRIPTION

FEATURES

The BS616LV2025 is a high performance, very low power CMOS Static

Random Access Memory organized as 131,072 words by 16 bits or

262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 4.5V to 5.5V supply voltage.

• Very low operation voltage : 4.5 ~ 5.5V

• Very low power consumption :

Vcc = 5.0V

C-grade: 40mA (Max.) operating current

I -grade: 45mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.6uA and maximum access time of 70/55 ns in 5V operation.

Easy memory expansion is provided by active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

• High speed access time :

-70

-55

70ns (Max.) at Vcc = 5.0V

55ns (Max.) at Vcc = 5.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

The BS616LV2025 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616LV2025 is available in DICE form and 48-pin BGA type.

PRODUCT FAMILY

POWER DISSIPATION

SPEED

( ns )

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc

PKG TYPE

( ICCSB1, Max )

( ICC, Max )

TEMPERATURE

RANGE

Vcc=5.0V

70 / 55

Vcc=5.0V

6uA

Vcc=5.0V

40mA

BS616LV2025DC

BS616LV2025AC

BS616LV2025DI

BS616LV2025AI

DICE

+0^OC to +70^OC

4.5V ~ 5.5V

BGA-48-0608

DICE

-40^OC to +85^O

25uA

45mA

BGA-48-0608

BLOCK DIAGRAM

PIN CONFIGURATION

A15

A14

A13

A12

A11

A10

Address

Input

1024

Row

Memory Array

1024 x 2048

Buffer

Decoder

2048

Data

16(8)

Column I/O

Input

Buffer

Write Driver

Sense Amp

16(8)

128(256)

Data

Output

Buffer

Column Decoder

D15

CE1

CE2

14(16)

Control

Address Input Buffer

CIO

A16 A0 A1 A2 A3

A4 A5

(SAE)

Vdd

Vss

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.4

April 2002

R0201-BS616LV2025

12 3 4 5 6 7...11

中文翻译

下载PDF

与BS616LV2025AC相关器件

型号	品牌	获取价格	描述	数据表
BS616LV2025AC55	BSI	获取价格	SRAM
BS616LV2025AC70	BSI	获取价格	SRAM
BS616LV2025ACG55	BSI	获取价格	SRAM
BS616LV2025ACG70	BSI	获取价格	SRAM
BS616LV2025ACP55	BSI	获取价格	SRAM
BS616LV2025ACP70	BSI	获取价格	SRAM
BS616LV2025AI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2025AI55	BSI	获取价格	SRAM
BS616LV2025AI70	BSI	获取价格	SRAM
BS616LV2025AIG55	BSI	获取价格	SRAM