Datasheet > BS616LV2025ACG70

BS616LV2025ACG70

更新时间： 2024-02-21 21:12:13

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
10页	301K
描述
SRAM

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中文翻译

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数据手册

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BS616LV2025ACG70 数据手册

Very Low Power/Voltage CMOS SRAM

128K x 16 or 256K x 8 bit switchable

BSI

BS616LV2025

DESCRIPTION

FEATURES

The BS616LV2025 is a high performance, very low power CMOS Static

Random Access Memory organized as 131,072 words by 16 bits or

262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.6uA and maximum access time of 55ns in 5V operation.

Easy memory expansion is provided by active HIGH chip enable2

(CE2), active LOW chip enable1(CE1), active LOW output enable(OE)

and three-state output drivers.

• Very low operation voltage : 4.5 ~ 5.5V

• Very low power consumption :

Vcc = 5.0V

C-grade: 40mA (Max.) operating current

I -grade: 45mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

-70

-55

70ns (Max.) at Vcc = 5.0V

55ns (Max.) at Vcc = 5.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616LV2025 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV2025 is available in DICE form and 48-pin BGA type.

PRODUCT FAMILY

POWER DISSIPATION

SPEED

( ns )

STANDBY

Operating

( ICC, Max )

PRODUCT

FAMILY

OPERATING

TEMPERATURE

Vcc

RANGE

PKG TYPE

( ICCSB1, Max )

Vcc=5.0V

70 / 55

Vcc=5.0V

6uA

Vcc=5.0V

40mA

BS616LV2025DC

BS616LV2025AC

BS616LV2025DI

BS616LV2025AI

DICE

BGA-48-0608

DICE

+0^OC to +70^O

-40^OC to +85^O

4.5V ~ 5.5V

25uA

45mA

BGA-48-0608

BLOCK DIAGRAM

PIN CONFIGURATION

A15

A14

A13

A12

Address

1024

A11

Input

A10

Row

Memory Array

1024 x 2048

Buffer

Decoder

2048

Data

Input

16(8)

Column I/O

Buffer

Write Driver

Sense Amp

16(8)

128(256)

Data

Output

Buffer

Column Decoder

D15

CE1

CE2

14(16)

Control

Address Input Buffer

A16 A0 A1 A2 A3

A4 A5

(SAE)

CIO

Vdd

Vss

Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.

Revision 2.5

Jan. 2004

R0201-BS616LV2025

12 3 4 5 6 7...10

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与BS616LV2025ACG70相关器件

型号	品牌	获取价格	描述	数据表
BS616LV2025ACP55	BSI	获取价格	SRAM
BS616LV2025ACP70	BSI	获取价格	SRAM
BS616LV2025AI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2025AI55	BSI	获取价格	SRAM
BS616LV2025AI70	BSI	获取价格	SRAM
BS616LV2025AIG55	BSI	获取价格	SRAM
BS616LV2025AIG70	BSI	获取价格	SRAM
BS616LV2025AIP55	BSI	获取价格	SRAM
BS616LV2025AIP70	BSI	获取价格	SRAM
BS616LV2025DC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable