Datasheet > BS616LV2021DI

BS616LV2021DI

更新时间： 2024-02-14 07:09:20

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	255K
描述
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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BS616LV2021DI 数据手册

Very Low Power/Voltage CMOS SRAM

128K x 16 or 256K x 8 bit switchable

BSI

BS616LV2021

DESCRIPTION

FEATURES

The BS616LV2021 is a high performance, very low power CMOS Static

Random Access Memory organized as 131,072 words by 16 bits or

262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

range of 2.4V to 5.5V supply voltage.

• Very low operation voltage : 2.4 ~ 5.5V

• Very low power consumption :

Vcc = 3.0V

C-grade: 20mA (Max.) operating current

I-grade: 25mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

C-grade: 40mA (Max.) operating current

I-grade: 45mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.1uA and maximum access time of 70/100ns in 3V operation.

Easy memory expansion is provided by active HIGH chip

enable2(CE2), active LOW chip enable1(CE1), active LOW output

enable(OE) and three-state output drivers.

Vcc = 5.0V

• High speed access time :

-70

-10

70ns (Max.) at Vcc = 3.0V

100ns (Max.) at Vcc = 3.0V

The BS616LV2021 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV2021 is available in DICE form and 48-pin BGA type.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

( ns )

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

Vcc

CCSB1

, Max )

(I , Max )

PKG TYPE

TEMPERATURE

RANGE

Vcc=

3.0V

5.0V

3.0V

5.0V

BS616LV2021DC

BS616LV2021AC

BS616LV2021DI

BS616LV2021AI

DICE

+0 ^OC to +70^O

-40 ^OC to +85^O

2.4V ~ 5.5V

70 / 100

0.7uA

1.5uA

6uA

20mA

40mA

45mA

BGA-48-0608

DICE

25uA

25mA

BGA-48-0608

PIN CONFIGURATION

BLOCK DIAGRAM

A15

A14

A13

A12

A11

A10

Address

Input

1024

Row

Decoder

Memory Array

1024 x 2048

Buffer

2048

Data

16(8)

Column I/O

Input

Buffer

Write Driver

Sense Amp

16(8)

128(256)

Data

Output

Buffer

Column Decoder

D15

CE1

CE2

14(16)

Control

Address Input Buffer

CIO

A16 A0 A1 A2 A3

A4 A5

(SAE)

Vdd

Vss

Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.

Revision 2.4

April 2002

R0201-BS616LV2021

12 3 4 5 6 7...11

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与BS616LV2021DI相关器件

型号	品牌	获取价格	描述	数据表
BS616LV2023	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2023AC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2023AI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2023DC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2023DI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2025	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2025AC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2025AC55	BSI	获取价格	SRAM
BS616LV2025AC70	BSI	获取价格	SRAM
BS616LV2025ACG55	BSI	获取价格	SRAM

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