是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSSOP, TSSOP48,.71,20 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最长访问时间: | 70 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-G48 |
JESD-609代码: | e0 | 内存密度: | 2097152 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
湿度敏感等级: | 3 | 端子数量: | 48 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP48,.71,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行: | PARALLEL | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.000001 A |
最小待机电流: | 1.5 V | 子类别: | SRAMs |
最大压摆率: | 0.016 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS616LV2019TI-70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIG55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIG70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIP55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2019TIP70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit | |
BS616LV2020 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable | |
BS616LV2020AC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable | |
BS616LV2020AI | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable | |
BS616LV2020DC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable | |
BS616LV2020DI | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |