Datasheet > BS616LV1013

BS616LV1013

更新时间： 2024-11-25 21:53:59

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
9页	259K
描述
Very Low Power/Voltage CMOS SRAM 64K X 16 bit

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中文翻译

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数据手册

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BS616LV1013 数据手册

Very Low Power/Voltage CMOS SRAM

64K X 16 bit

BSI

BS616LV1013

FEATURES

DESCRIPTION

• Very low operation voltage : 2.7 ~ 3.6V

The BS616LV1013 is a high performance, very low power CMOS Static

Random Access Memory organized as 65,536 words by 16 bits and

operates from a wide range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.02uA and maximum access time of 70ns in 3.0V operation.

Easy memory expansion is provided by an active LOW chip

enable(CE) and active LOW output enable(OE) and three-state output

drivers.

The BS616LV1013 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV1013 is available in the JEDEC standard 44-pin TSOP

Type II and 48-pin BGA package.

• Very low power consumption :

Vcc = 3.0V

C-grade : 20mA (Max.) operating current

I-grade : 25mA (Max.) operating current

0.02uA (Typ.) CMOS standby current

High speed access time :

-70

70ns (Max.) at Vcc = 3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

Vcc

RANGE

PRODUCT

FAMILY

OPERATING

TEMPERATURE

STANDBY

Operating

PKG TYPE

(ICCSB1, Max)

(ICC, Max)

Vcc=3.0 V

Vcc=3.0V

BS616LV1013EC

BS616LV1013AC

TSOP2-44

+0^OC to +70^O

2.7V ~ 3.6V

20mA

0.5uA

BGA-48-0608

BS616LV1013EI

BS616LV1013AI

TSOP2-44

-40^OC to +85^OC 2.7V ~ 3.6V

1.5uA

25mA

BGA-48-0608

PIN CONFIGURATIONS

BLOCK DIAGRAM

DQ0

DQ1

DQ2

DQ3

VCC

GND

DQ4

DQ5

DQ6

DQ7

A13

DQ15

DQ14

DQ13

DQ12

GND

VCC

DQ11

DQ10

DQ9

DQ8

A10

A11

Address

A15

512

A14

A12

BS616LV1013EC

BS616LV1013EI

Input

Row

Decoder

Memory Array

512 x 2048

Buffer

A15

A14

A13

A12

2048

Data

Input

Buffer

Column I/O

DQ0

Write Driver

Sense Amp

128

Data

Output

IO0

IO2

Buffer

Column Decoder

DQ15

IO8

IO9

IO10

IO11

IO12

IO13

IO1

IO3

IO4

IO5

A11

Control

Address Input Buffer

VSS

VCC

IO14

IO15

A14

A12

VCC

VSS

IO6

IO7

A11 A9 A3 A2 A1

A0 A10

A15

A13

A10

Vcc

Gnd

Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.

Revision 1.1

R0201-BS616LV1013

Jan.

2004

12 3 4 5 6 7...9

中文翻译

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与BS616LV1013相关器件

型号	品牌	获取价格	描述	数据表
BS616LV1013AC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616LV1013AC70	BSI	获取价格	Standard SRAM, 64KX16, 70ns, CMOS, PBGA48
BS616LV1013AC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616LV1013ACG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616LV1013ACP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616LV1013AI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616LV1013AI70	BSI	获取价格	Standard SRAM, 64KX16, 70ns, CMOS, PBGA48
BS616LV1013AI-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616LV1013AIG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616LV1013AIP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 64K X 16 bit

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