生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | TSOP2, | 针数: | 44 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 55 ns | JESD-30 代码: | R-PDSO-G44 |
长度: | 18.41 mm | 内存密度: | 1048576 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 44 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 64KX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
并行/串行: | PARALLEL | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS616LV1010EIP70 | BSI |
获取价格 |
Very Low Power CMOS SRAM 64K X 16 bit | |
BS616LV1010EIP75 | BSI |
获取价格 |
Very Low Power CMOS SRAM 64K X 16 bit | |
BS616LV1010FC55 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit | |
BS616LV1010FC70 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit | |
BS616LV1010FCG55 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit | |
BS616LV1010FCG70 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit | |
BS616LV1010FCP55 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit | |
BS616LV1010FCP70 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit | |
BS616LV1010FI55 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit | |
BS616LV1010FI70 | BSI |
获取价格 |
Very Low Power CMOS SRAM 1M X 16 bit |