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BS616LV1010FCG55 PDF预览

BS616LV1010FCG55

更新时间： 2024-11-26 05:16:11
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
11页 164K
描述
Very Low Power CMOS SRAM 1M X 16 bit

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BS616LV1010FCG55 数据手册

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Very Low Power CMOS SRAM  
1M X 16 bit  
BS616LV1611  
Pb-Free and Green package materials are compliant to RoHS  
n FEATURES  
ŸWide VCC operation voltage : 2.4V ~ 5.5V  
n DESCRIPTION  
The BS616LV1611 is a high performance, very low power CMOS  
Static Random Access Memory organized as 1,048,576 by 16 bits  
and operates form a wide range of 2.4V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both  
high speed and low power features with typical CMOS standby  
current of 1.5uA at 3.0V/25OC and maximum access time of 55ns at  
3.0V/85OC.  
ŸVery low power consumption :  
VCC = 3.0V  
VCC = 5.0V  
Operation current : 46mA (Max.)at 55ns  
2mA (Max.)at 1MHz  
1.5uA (Typ.) at 25OC  
Standby current :  
Operation current : 115mA (Max.)at 55ns  
10mA (Max.)at 1MHz  
Standby current :  
ŸHigh speed access time :  
6.0uA (Typ.) at 25OC  
Easy memory expansion is provided by an active LOW chip enable  
(CE1), active HIGH chip enable (CE2) and active LOW output  
enable (OE) and three-state output drivers.  
-55  
-70  
55ns(Max.) at VCC=3.0~5.5V  
70ns(Max.) at VCC=2.7~5.5V  
ŸAutomatic power down when chip is deselected  
ŸEasy expansion with CE2, CE1 and OE options  
ŸI/O Configuration x8/x16 selectable by LB and UB pin.  
ŸThree state outputs and TTL compatible  
The BS616LV1611 has an automatic power down feature, reducing  
the power consumption significantly when chip is deselected.  
The BS616LV1611 is available in 48-pin TSOP Type I package and  
48-ball BGA package.  
ŸFully static operation, no clock, no refresh  
ŸData retention supply voltage as low as 1.5V  
n POWER CONSUMPTION  
POWER DISSIPATION  
Operating  
STANDBY  
PRODUCT  
FAMILY  
OPERATING  
TEMPERATURE  
PKG TYPE  
(ICCSB1, Max)  
(ICC, Max)  
VCC=5.0V  
10MHz  
VCC=3.0V  
10MHz  
VCC=5.0V VCC=3.0V  
1MHz  
9mA  
fMax.  
1MHz  
fMax.  
BS616LV1611FC  
BS616LV1611TC  
BS616LV1611FI  
BS616LV1611TI  
BGA-48-0912  
TSOP I-48  
Commercial  
50uA  
8.0uA  
16uA  
48mA  
50mA  
113mA  
1.5mA  
19mA  
20mA  
45mA  
+0OC to +70OC  
BGA-48-0912  
TSOP I-48  
Industrial  
100uA  
10mA  
115mA  
2mA  
46mA  
-40OC to +85OC  
n PIN CONFIGURATIONS  
n BLOCK DIAGRAM  
A4  
A 3  
A2  
A1  
A0  
1
2
3
4
5
6
7
8
48  
47  
46  
45  
4 4  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A5  
A6  
A7  
OE  
UB  
LB  
CE2  
NC  
DQ15  
DQ14  
DQ13  
DQ12  
VSS  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
A8  
A13  
A 12  
A11  
CE1  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
NC  
VSS  
DQ4  
DQ5  
DQ6  
DQ7  
A19  
WE  
A18  
A17  
A16  
A15  
A14  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
Address  
Input  
1024  
Memory Array  
10  
Row  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Decoder  
Buffer  
1024 x 16384  
BS616LV1611TC  
BS616LV1611TI  
16384  
DQ0  
Column I/O  
16  
16  
Data  
Input  
Buffer  
.
.
.
.
.
.
.
A9  
.
A10  
A11  
A12  
A13  
Write Driver  
Sense Amp  
.
16  
16  
.
Data  
Output  
Buffer  
.
1024  
.
Column Decoder  
1
2
3
4
5
6
DQ15  
CE2  
A
B
C
D
E
F
LB  
OE  
A0  
A1  
A2  
10  
CE2  
CE1  
WE  
OE  
UB  
Address Input Buffer  
D8  
D9  
UB  
D10  
D11  
D12  
D13  
A19  
A8  
A3  
A5  
A4  
A6  
CE1  
D1  
D0  
D2  
Control  
LB  
A 14 A 15 A 16 A 17 A 18 A 0 A 1 A 2 A 3 A 19  
V CC  
V SS  
VSS  
VCC  
D14  
D15  
A18  
A17  
NC  
A14  
A12  
A9  
A7  
D3  
VCC  
VSS  
D6  
A16  
A15  
A13  
A10  
D4  
D5  
G
H
WE  
A11  
D7  
NC  
48-ball BGA top view  
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.  
R0201-BS616LV1611  
Revision 2.3  
May. 2006  
1
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