Very Low Power CMOS SRAM
1M X 16 bit
BS616LV1611
Pb-Free and Green package materials are compliant to RoHS
n FEATURES
ŸWide VCC operation voltage : 2.4V ~ 5.5V
n DESCRIPTION
The BS616LV1611 is a high performance, very low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 1.5uA at 3.0V/25OC and maximum access time of 55ns at
3.0V/85OC.
ŸVery low power consumption :
VCC = 3.0V
VCC = 5.0V
Operation current : 46mA (Max.)at 55ns
2mA (Max.)at 1MHz
1.5uA (Typ.) at 25OC
Standby current :
Operation current : 115mA (Max.)at 55ns
10mA (Max.)at 1MHz
Standby current :
ŸHigh speed access time :
6.0uA (Typ.) at 25OC
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
-55
-70
55ns(Max.) at VCC=3.0~5.5V
70ns(Max.) at VCC=2.7~5.5V
ŸAutomatic power down when chip is deselected
ŸEasy expansion with CE2, CE1 and OE options
ŸI/O Configuration x8/x16 selectable by LB and UB pin.
ŸThree state outputs and TTL compatible
The BS616LV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1611 is available in 48-pin TSOP Type I package and
48-ball BGA package.
ŸFully static operation, no clock, no refresh
ŸData retention supply voltage as low as 1.5V
n POWER CONSUMPTION
POWER DISSIPATION
Operating
STANDBY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
PKG TYPE
(ICCSB1, Max)
(ICC, Max)
VCC=5.0V
10MHz
VCC=3.0V
10MHz
VCC=5.0V VCC=3.0V
1MHz
9mA
fMax.
1MHz
fMax.
BS616LV1611FC
BS616LV1611TC
BS616LV1611FI
BS616LV1611TI
BGA-48-0912
TSOP I-48
Commercial
50uA
8.0uA
16uA
48mA
50mA
113mA
1.5mA
19mA
20mA
45mA
+0OC to +70OC
BGA-48-0912
TSOP I-48
Industrial
100uA
10mA
115mA
2mA
46mA
-40OC to +85OC
n PIN CONFIGURATIONS
n BLOCK DIAGRAM
A4
A 3
A2
A1
A0
1
2
3
4
5
6
7
8
48
47
46
45
4 4
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A5
A6
A7
OE
UB
LB
CE2
NC
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
A8
A13
A 12
A11
CE1
DQ0
DQ1
DQ2
DQ3
VCC
NC
VSS
DQ4
DQ5
DQ6
DQ7
A19
WE
A18
A17
A16
A15
A14
A10
A9
A8
A7
A6
A5
A4
Address
Input
1024
Memory Array
10
Row
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Decoder
Buffer
1024 x 16384
BS616LV1611TC
BS616LV1611TI
16384
DQ0
Column I/O
16
16
Data
Input
Buffer
.
.
.
.
.
.
.
A9
.
A10
A11
A12
A13
Write Driver
Sense Amp
.
16
16
.
Data
Output
Buffer
.
1024
.
Column Decoder
1
2
3
4
5
6
DQ15
CE2
A
B
C
D
E
F
LB
OE
A0
A1
A2
10
CE2
CE1
WE
OE
UB
Address Input Buffer
D8
D9
UB
D10
D11
D12
D13
A19
A8
A3
A5
A4
A6
CE1
D1
D0
D2
Control
LB
A 14 A 15 A 16 A 17 A 18 A 0 A 1 A 2 A 3 A 19
V CC
V SS
VSS
VCC
D14
D15
A18
A17
NC
A14
A12
A9
A7
D3
VCC
VSS
D6
A16
A15
A13
A10
D4
D5
G
H
WE
A11
D7
NC
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS616LV1611
Revision 2.3
May. 2006
1