Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V(BO)
Breakover voltage
BRS212-140
-
140
160
180
200
220
240
260
280
-
-
-
V
V
BRS212-160
-
BRS212-180
-
-
V
BRS212-200
-
-
V
BRS212-220
-
-
V
telecommunications
equipment
BRS212-240
-
-
V
against voltage transients.
BRS212-260
-
-
V
BRS212-280
-
150
-
-
V
IH
Holding current
Non-repetitive peak pulse
current (CCITT K17)
-
mA
A
IPP
-
40
OUTLINE - SOD106
SYMBOL
date code
XXX denotes voltage grade
YM
212
XXX
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VD
Continuous voltage
BRS212-140
-
-
-
-
-
-
-
-
-
105
120
135
150
165
180
195
210
40
V
V
V
V
V
V
V
V
A
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
IPP
Non-repetitive peak pulse
current
5/310 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
ITSM
Non repetitive surge peak
on-state current
half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
tp = 10 ms
-
15
A
I2t
dIT/dt
I2t for fusing
-
-
1.1
50
A2s
A/µs
Rate of rise of on-state current tp = 10 µs
after V(BO) turn-on
Ptot
Continuous dissipation on
infinite heatsink
Tsp = 50˚C
-
4
W
PTM
Tstg
Tj
Peak dissipation
tp = 1 ms; Ta = 25˚C
-
50
W
˚C
˚C
˚C
Storage temperature
Operating junction temperature
- 40
150
150
260
-
-
TL
Maximum terminal temperature soldering time = 10 s
for soldering
January 1997
1
Rev 1.000