5秒后页面跳转
BRS212-280 PDF预览

BRS212-280

更新时间: 2024-11-18 20:23:59
品牌 Logo 应用领域
飞利浦 - PHILIPS 光电二极管
页数 文件大小 规格书
6页 30K
描述
Silicon Surge Protector

BRS212-280 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.87Is Samacsys:N
JESD-609代码:e0最大通态电压:2.5 V
最高工作温度:150 °C重复峰值反向电压:246 V
子类别:Silicon Surge Protectors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

BRS212-280 数据手册

 浏览型号BRS212-280的Datasheet PDF文件第2页浏览型号BRS212-280的Datasheet PDF文件第3页浏览型号BRS212-280的Datasheet PDF文件第4页浏览型号BRS212-280的Datasheet PDF文件第5页浏览型号BRS212-280的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Breakover diodes  
BRS212 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
A range of bidirectional, breakover  
diodes in a two terminal, surface  
mounting, plastic envelope. These  
devices feature controlled breakover  
voltage and high holding current  
together with high peak current  
handling capability. Their intended  
application is protection of line based  
SYMBOL PARAMETER  
MIN. TYP. MAX. UNIT  
V(BO)  
Breakover voltage  
BRS212-140  
-
140  
160  
180  
200  
220  
240  
260  
280  
-
-
-
V
V
BRS212-160  
-
BRS212-180  
-
-
V
BRS212-200  
-
-
V
BRS212-220  
-
-
V
telecommunications  
equipment  
BRS212-240  
-
-
V
against voltage transients.  
BRS212-260  
-
-
V
BRS212-280  
-
150  
-
-
V
IH  
Holding current  
Non-repetitive peak pulse  
current (CCITT K17)  
-
mA  
A
IPP  
-
40  
OUTLINE - SOD106  
SYMBOL  
date code  
XXX denotes voltage grade  
YM  
212  
XXX  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VD  
Continuous voltage  
BRS212-140  
-
-
-
-
-
-
-
-
-
105  
120  
135  
150  
165  
180  
195  
210  
40  
V
V
V
V
V
V
V
V
A
BRS212-160  
BRS212-180  
BRS212-200  
BRS212-220  
BRS212-240  
BRS212-260  
BRS212-280  
IPP  
Non-repetitive peak pulse  
current  
5/310 µs impulse equivalent to  
10/700 µs, 1.6 kV voltage impulse  
(CCITT K17)  
ITSM  
Non repetitive surge peak  
on-state current  
half sine wave; t = 10 ms;  
Tj = 70 ˚C prior to surge  
tp = 10 ms  
-
15  
A
I2t  
dIT/dt  
I2t for fusing  
-
-
1.1  
50  
A2s  
A/µs  
Rate of rise of on-state current tp = 10 µs  
after V(BO) turn-on  
Ptot  
Continuous dissipation on  
infinite heatsink  
Tsp = 50˚C  
-
4
W
PTM  
Tstg  
Tj  
Peak dissipation  
tp = 1 ms; Ta = 25˚C  
-
50  
W
˚C  
˚C  
˚C  
Storage temperature  
Operating junction temperature  
- 40  
150  
150  
260  
-
-
TL  
Maximum terminal temperature soldering time = 10 s  
for soldering  
January 1997  
1
Rev 1.000