Datasheet > BRS212-180

BRS212-180

更新时间： 2024-11-18 20:23:59

品牌	Logo	应用领域
飞利浦 - PHILIPS		光电二极管
页数	文件大小	规格书
6页	30K
描述
Silicon Surge Protector

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技术参数
数据手册

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BRS212-180 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.87	Is Samacsys：	N
JESD-609代码：	e0	最大通态电压：	2.5 V
最高工作温度：	150 °C	重复峰值反向电压：	158 V
子类别：	Silicon Surge Protectors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	触发设备类型：	SILICON SURGE PROTECTOR
Base Number Matches：	1

BRS212-180 数据手册

Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

diodes in a two terminal, surface

mounting, plastic envelope. These

devices feature controlled breakover

voltage and high holding current

together with high peak current

handling capability. Their intended

application is protection of line based

SYMBOL PARAMETER

MIN. TYP. MAX. UNIT

V_(BO)

Breakover voltage

BRS212-140

140

160

180

200

220

240

260

280

BRS212-160

BRS212-180

BRS212-200

BRS212-220

telecommunications

equipment

BRS212-240

against voltage transients.

BRS212-260

BRS212-280

150

I_H

Holding current

Non-repetitive peak pulse

current (CCITT K17)

I_PP

OUTLINE - SOD106

SYMBOL

date code

XXX denotes voltage grade

212

XXX

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_D

Continuous voltage

BRS212-140

105

120

135

150

165

180

195

210

BRS212-160

BRS212-180

BRS212-200

BRS212-220

BRS212-240

BRS212-260

BRS212-280

I_PP

Non-repetitive peak pulse

current

5/310 µs impulse equivalent to

10/700 µs, 1.6 kV voltage impulse

(CCITT K17)

I_TSM

Non repetitive surge peak

on-state current

half sine wave; t = 10 ms;

T_j= 70 ˚C prior to surge

t_p= 10 ms

I²t

dI_T/dt

I²t for fusing

1.1

A²s

A/µs

Rate of rise of on-state current t_p= 10 µs

after V_(BO)turn-on

P_tot

Continuous dissipation on

infinite heatsink

T_sp= 50˚C

P_TM

T_stg

T_j

Peak dissipation

t_p= 1 ms; T_a= 25˚C

˚C

Storage temperature

Operating junction temperature

- 40

150

260

T_L

Maximum terminal temperature soldering time = 10 s

for soldering

January 1997

Rev 1.000

12 3 4 5 6

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与BRS212-180相关器件

型号	品牌	获取价格	描述	数据表
BRS212-200	NXP	获取价格	Breakover diodes
BRS212-200	PHILIPS	获取价格	Silicon Surge Protector
BRS212-220	NXP	获取价格	Breakover diodes
BRS212-220	PHILIPS	获取价格	Silicon Surge Protector
BRS212-240	NXP	获取价格	Breakover diodes
BRS212-240	PHILIPS	获取价格	Silicon Surge Protector
BRS212-260	NXP	获取价格	Breakover diodes
BRS212-260	PHILIPS	获取价格	Silicon Surge Protector
BRS212-280	NXP	获取价格	Breakover diodes
BRS212-280	PHILIPS	获取价格	Silicon Surge Protector