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BRF48085 PDF预览

BRF48085

更新时间: 2024-11-09 08:59:43
品牌 Logo 应用领域
其他 - ETC 晶体晶体管微波
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6页 43K
描述
MEDIUM POWER SILICON MICROWAVE TRANSISTOR

BRF48085 数据手册

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BIPOLARICS,INC.  
Part Number BRF480  
MEDIUM POWER SILICON MICROWAVE TRANSISTOR  
PRODUCT DATA SHEET  
DESCRIPTION AND APPLICATIONS:  
FEATURES:  
Bipolarics' BRF480 is a high performance silicon bipolar  
transistor intended for medium power linear and Class C  
applications at VHF, UHF and microwave frequencies in 7.2  
and 12V systems. Depending on package type, the BRF480  
can operate at up to 0.5W. These applications include high  
intermod receivers, CATV and instrumentation amplifiers as  
well as pre-drivers, drivers and final stages in transmitter  
applications such as cellular telephone. Package options in-  
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,  
0.145" Plastic SOT-103 and 0.230" power flange package.  
High Gain Bandwidth Product  
f = 8 GHz typ @ IC = 70 mA  
t
High Gain  
|S21|2 = 14.2 dB @ 1.0 GHz  
8.2 dB @ 2.0 GHz  
Absolute Maximum Ratings:  
Dice, Plastic, Hermetic and Surface  
Mount packages available  
SYMBOL  
PARAMETERS  
RATING  
UNITS  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
25  
15  
V
V
1.5  
V
Collector Current (continuous)  
Collector Current (instantaneous)  
Junction Temperature  
120  
mA  
mA  
oC  
PERFORMANCE DATA:  
IC  
MAX  
T
180  
200  
Electrical Characteristics (TA = 25oC)  
J
(1)  
TSTG  
Storage Temperature  
-65 to 150  
50  
oC  
θJC  
Thermal Resistance  
C/W  
(1) Depends on package  
SYMBOL  
PARAMETERS & CONDITIONS  
UNIT  
MIN.  
TYP.  
MAX.  
VCE = 8V, IC =60 mA, Class A, unless stated  
Gain Bandwidth Product  
Insertion Power Gain:  
f
t
GHz  
8.0  
2
|S21  
|
Micro-X  
f = 1.0 GHz  
f = 2.0 GHz  
dB  
dB  
14.2  
8.2  
SOT-103  
P
Power output at 1dB compression:  
Noise Figure: VCE = 5V, IC =20 mA  
f = 1.0 GHz  
IC = 75 mA  
dBm  
dB  
27.0  
1.6  
1dB  
NF  
f = 1.0 GHz  
hFE  
Forward Current Transfer Ratio: VCE = 5V, IC = 15 mA  
Collector Cutoff Current : VCB = 8V  
30  
100  
300  
0.4  
ICBO  
µA  
CCB  
Collector Base Capacitance: VCB =8V  
f = 1MHz  
pF  
.75  

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