BIPOLARICS,INC.
Part Number BRF480
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
DESCRIPTION AND APPLICATIONS:
FEATURES:
Bipolarics' BRF480 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the BRF480
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
• High Gain Bandwidth Product
f = 8 GHz typ @ IC = 70 mA
t
• High Gain
|S21|2 = 14.2 dB @ 1.0 GHz
8.2 dB @ 2.0 GHz
Absolute Maximum Ratings:
• Dice, Plastic, Hermetic and Surface
Mount packages available
SYMBOL
PARAMETERS
RATING
UNITS
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
25
15
V
V
1.5
V
Collector Current (continuous)
Collector Current (instantaneous)
Junction Temperature
120
mA
mA
oC
PERFORMANCE DATA:
IC
MAX
T
180
200
• Electrical Characteristics (TA = 25oC)
J
(1)
TSTG
Storage Temperature
-65 to 150
50
oC
θJC
Thermal Resistance
C/W
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
UNIT
MIN.
TYP.
MAX.
VCE = 8V, IC =60 mA, Class A, unless stated
Gain Bandwidth Product
Insertion Power Gain:
f
t
GHz
8.0
2
|S21
|
Micro-X
f = 1.0 GHz
f = 2.0 GHz
dB
dB
14.2
8.2
SOT-103
P
Power output at 1dB compression:
Noise Figure: VCE = 5V, IC =20 mA
f = 1.0 GHz
IC = 75 mA
dBm
dB
27.0
1.6
1dB
NF
f = 1.0 GHz
hFE
Forward Current Transfer Ratio: VCE = 5V, IC = 15 mA
Collector Cutoff Current : VCB = 8V
30
100
300
0.4
ICBO
µA
CCB
Collector Base Capacitance: VCB =8V
f = 1MHz
pF
.75