Datasheet > BRF4809

BRF4809

更新时间： 2024-11-25 08:59:43

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MEDIUM POWER SILICON MICROWAVE TRANSISTOR

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BRF4809 数据手册

BIPOLARICS,INC.

Part Number BRF480

MEDIUM POWER SILICON MICROWAVE TRANSISTOR

PRODUCT DATA SHEET

DESCRIPTION AND APPLICATIONS:

FEATURES:

Bipolarics' BRF480 is a high performance silicon bipolar

transistor intended for medium power linear and Class C

applications at VHF, UHF and microwave frequencies in 7.2

and 12V systems. Depending on package type, the BRF480

can operate at up to 0.5W. These applications include high

intermod receivers, CATV and instrumentation amplifiers as

well as pre-drivers, drivers and final stages in transmitter

applications such as cellular telephone. Package options in-

clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,

0.145" Plastic SOT-103 and 0.230" power flange package.

• High Gain Bandwidth Product

f = 8 GHz typ @ I_C= 70 mA

• High Gain

|S₂₁|²= 14.2 dB @ 1.0 GHz

8.2 dB @ 2.0 GHz

Absolute Maximum Ratings:

• Dice, Plastic, Hermetic and Surface

Mount packages available

SYMBOL

PARAMETERS

RATING

UNITS

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

1.5

Collector Current (continuous)

Collector Current (instantaneous)

Junction Temperature

120

^oC

PERFORMANCE DATA:

I_C

MAX

180

200

• Electrical Characteristics (T_A= 25^oC)

(1)

T_STG

Storage Temperature

-65 to 150

^oC

θJC

Thermal Resistance

C/W

(1) Depends on package

SYMBOL

PARAMETERS & CONDITIONS

UNIT

MIN.

TYP.

MAX.

V_CE= 8V, I_C=60 mA, Class A, unless stated

Gain Bandwidth Product

Insertion Power Gain:

GHz

8.0

|S₂₁

Micro-X

f = 1.0 GHz

f = 2.0 GHz

14.2

8.2

SOT-103

Power output at 1dB compression:

Noise Figure: V_CE= 5V, I_C=20 mA

f = 1.0 GHz

I_C= 75 mA

dBm

27.0

1.6

1dB

f = 1.0 GHz

h_FE

Forward Current Transfer Ratio: V_CE= 5V, I_C= 15 mA

Collector Cutoff Current : V_CB= 8V

100

300

0.4

I_CBO

µA

C_CB

Collector Base Capacitance: V_CB=8V

f = 1MHz

.75

12 3 4 5 6

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