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BR5001W PDF预览

BR5001W

更新时间: 2024-11-18 20:21:23
品牌 Logo 应用领域
虹扬 - HY 局域网二极管
页数 文件大小 规格书
2页 31K
描述
Bridge Rectifier Diode,

BR5001W 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.66
二极管类型:BRIDGE RECTIFIER DIODEBase Number Matches:1

BR5001W 数据手册

 浏览型号BR5001W的Datasheet PDF文件第2页 
BR10/15/25/35/50A W SERIES  
REVERSE VOLTAGE  
FORWARD CURRENT - 10/15/25/35/50Amperes  
-
50 to 1000Volts  
SILICON BRIDGE RECTIFIERS  
BRW  
FEATURES  
METAL HEAT SINK  
Surge overload -240~500 amperes peak  
.442(11.23)  
.424(10.77)  
Low forward voltage drop  
Mounting position: Any  
Electrically isolated base -2000 Volts  
Materials used carries U/L recognition  
1.200  
(30.5)MIN  
.042(1.07)  
.038(0.97)  
Hole for  
No.8 screw  
193"(4.9)diam  
1.114(28.3)  
1.133(28.8)  
1.133(28.8)  
1.114(28.3)  
.732(18.6)  
.469(11.9)  
.429(10.9)  
.693(17.6)  
.732(18.6)  
.693(17.6)  
Dimensions in inches and (milimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Resistive or inductive load 60HZ.  
For capacitive load current by 20%  
BR-W  
10005  
15005  
25005  
35005  
50005  
50  
BR-W  
1001  
1501  
2501  
3501  
5001  
100  
BR-W  
1002  
1502  
2502  
3502  
5002  
200  
BR-W  
1004  
1504  
2504  
3504  
5004  
400  
BR-W  
1006  
1506  
2506  
3506  
5006  
600  
BR-W  
1008  
1508  
2508  
3508  
5008  
800  
BR-W  
1010  
1510  
2510  
3510  
5010  
1000  
700  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
V
V
Maximum RMS Bridge Input Voltage  
Maximum Average Forward  
35  
70  
140  
280  
420  
560  
I(AV)  
A
25  
35  
10  
50  
15  
Rectified Output Current at  
Peak Forward Surge Current  
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load  
Maximum Forward Voltage Drop  
@Tc=55℃  
BR-W  
10  
BR-W  
15  
BR-W  
25  
BR-W  
35  
BR-W  
50  
400  
500  
300  
400  
240  
IFSM  
A
VF  
IR  
1.1  
10.0  
V
Per Element at 5.0/7.5/12.5/17.5/25.0A Peak  
Maximum Reverse Current at Rated  
μA  
DC Blocking Voltage Per Element  
Operating Temperature Range  
@TJ=25℃  
-55 to +150  
-55 to +150  
TJ  
Storage Temperature Range  
TSTG  
REV. 1, 30-Dec-2011  
~ 452 ~  

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