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BR5002W PDF预览

BR5002W

更新时间: 2024-11-17 22:27:51
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管
页数 文件大小 规格书
3页 68K
描述
SILICON BRIDGE RECTIFIERS

BR5002W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:S-PUFM-W4
Reach Compliance Code:compliant风险等级:5.77
Is Samacsys:N其他特性:HIGH RELIABILITY
最小击穿电压:200 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:S-PUFM-W4最大非重复峰值正向电流:400 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:TS 16949最大重复峰值反向电压:200 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BR5002W 数据手册

 浏览型号BR5002W的Datasheet PDF文件第2页浏览型号BR5002W的Datasheet PDF文件第3页 
ELECTRONICS INDUSTRY (USA) CO., LTD.  
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND  
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com  
SILICON BRIDGE RECTIFIERS  
BR50W  
BR5000W - BR5010W  
PRV : 50 - 1000 Volts  
Io : 50 Amperes  
0.732 (18.6)  
0.692 (17.5)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.130 (28.7)  
1.120 (28.4)  
0.470 (11.9)  
0.430 (10.9)  
* Low reverse current  
* Low forward voltage drop  
* High case dielectric strength  
0.21 (5.3)  
0.20 (5.1)  
MECHANICAL DATA :  
0.042 (1.06)  
0.038 (0.96)  
* Case : Molded plastic with heatsink integrally  
mounted in the bridge encapsulation  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Bolt down on heat-sink  
with silicone thermal compound between  
bridge and mounting surface for maximum  
heat transfer efficiency  
1.2 (30.5)  
MIN.  
0.310 (7.87)  
0.280(7.11)  
Dimensions in inches and ( millimeters )  
* Weight : 15.95 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SYMBOL  
BR 5000W  
BR 5001W  
BR 5002W  
BR 5004W  
BR 5006W  
BR 5008W  
BR 5010W  
UNIT  
RATING  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
50  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Maximum DC Blocking Voltage  
100  
1000  
Volts  
IF(AV)  
Amps.  
Maximum Average Forward Current Tc=55°C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
IFSM  
400  
Amps.  
I2t  
VF  
A2S  
Volts  
mA  
664  
1.1  
Maximum Forward Voltage per Diode at IF = 25 Amps.  
IR  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
IR(H)  
200  
Ta = 100 °C  
mA  
Typical Thermal Resistance at Junction to Case ( Note 1 )  
Operating Junction Temperature Range  
Storage Temperature Range  
1.0  
°C/W  
°C  
RqJC  
TJ  
- 40 to + 150  
- 40 to + 150  
TSTG  
°C  
Notes :  
1 ) Thermal resistance from Junction to Case with units mounted on heat sink.  
UPDATE : APRIL 21, 1998  

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