Datasheet > BR3506

BR3506

更新时间： 2024-09-25 06:44:15

品牌	Logo	应用领域
SYNSEMI		二极管局域网
页数	文件大小	规格书
2页	30K
描述
SILICON BRIDGE RECTIFIERS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BR3506 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.68	Base Number Matches：	1

BR3506 数据手册

SILICON BRIDGE RECTIFIERS

BR3500 - BR3512

BR50

PRV : 50 - 1200 Volts

Io : 35 Amperes

0.728(18.50)

0.688(17.40)

FEATURES :

1.130(28.70)

1.120(28.40)

0.570(14.50)

0.530(13.40)

0.685(16.70)

0.618(15.70)

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.210(5.30)

0.200(5.10)

0.658(16.70)

0.618(15.70)

0.032(0.81)

0.252(6.40)

0.248(6.30)

0.028(0.71)

f 0.100(2.50)

0.090(2.30)

MECHANICAL DATA :

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : plated .25" (6.35 mm). Faston

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink with

silicone thermal compound between bridge

and mounting surface for maximum heat

transfer efficiency.

0.905(23.0)

0.826(21.0)

0.310(7.87)

0.280(7.11)

Metal Heatsink

Dimensions in inches and ( millimeters )

* Weight : 17.1 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

3500

3501

3502

3504

3506

3508

3510

3512

RATING

SYMBOL

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

1200

VRRM

VRMS

VDC

700

840

Maximum DC Blocking Voltage

100

1000

1200

IF(AV)

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

400

IFSM

I²t

A²S

660

1.1

Maximum Forward Voltage per Diode at IF = 17.5 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Ta = 25 °C

200

1.5

IR(H)

Ta = 100 °C

°C/W

°C

RqJC

RqJA

Typical Thermal Resistance at Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

- 40 to + 150

°C

TSTG

°C

Notes :

1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate

Page 1 of 2

Rev. 02 : March 24, 2005

中文翻译

下载PDF

与BR3506相关器件

型号	品牌	获取价格	描述	数据表
BR3506G	EIC	获取价格	Bridge Rectifier Diode, 35A, 600V V(RRM),
BR3506-G	COMCHIP	获取价格	Silicon Bridge Rectifiers
BR3506GW	HY	获取价格	Rectifier Diode,
BR3506L	YANGJIE	获取价格	Bridge Rectifier Diode, 35A, 600V V(RRM),
BR3506M	EIC	获取价格	SILICON BRIDGE RECTIFIERS
BR3506W	BL Galaxy Electrical	获取价格	SILICON BRIDGE RECTIFIERS
BR3506W	EIC	获取价格	SILICON BRIDGE RECTIFIERS
BR3506W	HY	获取价格	Bridge Rectifier Diode
BR3508	SYNSEMI	获取价格	SILICON BRIDGE RECTIFIERS
BR3508	SECOS	获取价格	AMP Silicon Bridge Rectifiers