Datasheet > BR258W

BR258W

更新时间： 2024-11-28 22:48:31

品牌	Logo	应用领域
DCCOM		二极管
页数	文件大小	规格书
2页	430K
描述
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

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中文翻译

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数据手册

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BR258W 数据手册

BR2505W

THRU

DC COMPONENTS CO., LTD.

RECTIFIER SPECIALISTS

BR2510W

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts

CURRENT - 25 Amperes

FEATURES

* Plastic case with heatsink for Maximum Heat Dissipation

* Surge overload ratings-400 Amperes

* Low forward voltage drop

BR-25W

METAL HEAT SINK

TYP

MECHANICAL DATA

* Case: Molded plastic with heatsink

* Epoxy: UL 94V-0 rate flame retardant

*Lead: MIL-STD-202E, Method 208 guaranteed

* Polarity: As marked

* Mounting position: Any

* Weight: 30 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

BR2505W BR251W BR252W BR254W BR256W BR258W BR2510W

SYMBOL

UNITS

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

RRM

RMS

100

200

140

400

280

600

420

800

560

1000

700

Volts

Maximum DC Blocking Voltage

100

200

400

600

800

1000

Volts

Maximum Average Forward Rectified Output Current at Tc = 55^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

Amps

FSM

400

Amps

Volts

1.1

Maximum Forward Voltage Drop per element at 12.5A DC

= 25^oC

Maximum DC Reverse Current at Rated

uAmps

DC Blocking Voltage per element

I²t Rating for Fusing (t<8.3ms)

= 100^oC

500

I²t

374

300

2.5

A²Sec

⁰C/W

Typical Junction Capacitance ( Note1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

RθJ C

STG

-55 to + 150

⁰C

NOTES : 1.Measured at 1 MH

Z and applied reverse voltage of 4.0 volts

2. Thermal Resistance from Junction to Case per leg.

250

EXIT

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