Datasheet > BR25A1MFJ-3M

BR25A1MFJ-3M

更新时间： 2024-12-01 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
30页	714K
描述
BR25A1MFJ-3M是1Mbit SPI BUS接口的串行EEPROM。

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BR25A1MFJ-3M 数据手册

Datasheet

Serial EEPROM Series Automotive EEPROM

105°C Operation SPI BUS EEPROM

BR25A1M-3M

General Description

BR25A1M-3M is a 1Mbit Serial EEPROM of SPI BUS Interface.

Features

Packages W(Typ) x D(Typ) x H(Max)

High Speed Clock Action up to 10MHz (Max)

Wait Function by HOLDB Terminal

Part or Whole of Memory Arrays Settable as

Read only Memory Area by Program

2.5V to 5.5V Single Power Source Operation Most

Suitable for Battery Use

Up to 256 Bytes in Page Write Mode

For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)

Self-timed Programming Cycle

SOP8

SOP- J8

4.90mm x 6.00mm x 1.65mm

5.00mm x 6.20mm x 1.71mm

Low Current Consumption

Figure 1.

At Write Action (5V)

At Read Action (5V)

At Standby Action (5V)

0.7mA (Typ)

2.4mA (Typ)

0.1µA (Typ)

Address Auto Increment Function at Read Action

Prevention of Write Mistake

Write Prohibition at Power On

Write Prohibition by Command Code (WRDI)

Write Prohibition by WPB Pin

Write Prohibition Block Setting by Status Registers

(BP1, BP0)

Prevention of Write Mistake at Low Voltage

More than 100 years Data Retention

More than 1 Million Write Cycles

Bit Format 128K×8

Initial Delivery Data

Memory Array : FFh

Status Register : WPEN, BP1, BP0 : 0

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0R1R0G100400-1-2

03.Oct.2014 Rev.002

1/27

TSZ22111･14･001

12 3 4 5 6 7...30

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与BR25A1MFJ-3M相关器件

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