Datasheet > BR25G128FVM-3GTR

BR25G128FVM-3GTR

更新时间： 2024-12-01 01:01:19

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
36页	769K
描述
SPI BUS EEPROM

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数据手册

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BR25G128FVM-3GTR 数据手册

Datasheet

Serial EEPROM Series Standard EEPROM

SPI BUS EEPROM

BR25G128-3

General Description

BR25G128-3 is a 128Kbit Serial EEPROM of SPI BUS Interface.

Features

Packages W(Typ) x D(Typ) x H(Max)

High Speed Clock Action up to 20MHz (Max)

Wait Function by HOLDB Terminal

Part or Whole of Memory Arrays Settable as

Read only Memory Area by Program

1.6V to 5.5V Single Power Source Operation Most

Suitable for Battery Use.

Up to 64 Bytes in Page Write Mode.

For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)

Self-timed Programming Cycle

SOP8

MSOP8

2.90mm x 4.00mm x 0.90mm

5.00mm x 6.20mm x 1.71mm

Low Current Consumption

At Write Action (5V)

At Read Action (5V)

At Standby Action (5V)

0.5mA (Typ)

2.0mA (Typ)

0.1µA (Typ)

Address Auto Increment Function at Read Action

Prevention of Write Mistake

VSON008X2030

2.00mm x 3.00mm x 0.60mm

SOP- J8

4.90mm x 6.00mm x 1.65mm

Write Prohibition at Power On

Write Prohibition by Command Code (WRDI)

Write Prohibition by WPB Pin

Write Prohibition Block Setting by Status Registers

(BP1, BP0)

Prevention of Write Mistake at Low Voltage

More than 100 years Data Retention.

More than 1 Million Write Cycles.

Bit Format 16K×8

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

Initial Delivery Data

Memory Array: FFh

Status Register: WPEN, BP1, BP0 : 0

Figure 1.

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0R2R0G100670-1-2

19.Mar.2014 Rev.001

1/32

TSZ22111･14･001

12 3 4 5 6 7...36

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