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BR24T256FJ-WGE2 PDF预览

BR24T256FJ-WGE2

更新时间: 2024-09-19 18:28:47
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
22页 423K
描述
EEPROM, 32KX8, Serial, CMOS, PDSO8, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

BR24T256FJ-WGE2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SOP-8针数:8
Reach Compliance Code:compliant风险等级:5.56
其他特性:SEATED HT-CALCULATED最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:LSOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/5 V
认证状态:Not Qualified座面最大高度:1.65 mm
串行总线类型:MICROWIRE最大待机电流:0.000002 A
子类别:EEPROMs最大压摆率:0.0025 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

BR24T256FJ-WGE2 数据手册

 浏览型号BR24T256FJ-WGE2的Datasheet PDF文件第2页浏览型号BR24T256FJ-WGE2的Datasheet PDF文件第3页浏览型号BR24T256FJ-WGE2的Datasheet PDF文件第4页浏览型号BR24T256FJ-WGE2的Datasheet PDF文件第5页浏览型号BR24T256FJ-WGE2的Datasheet PDF文件第6页浏览型号BR24T256FJ-WGE2的Datasheet PDF文件第7页 
High Reliability Serial EEPROMs  
I2C BUS  
BR24□□□□family  
BR24T□□□□Series  
No.11001EAT21  
Description  
BR24T□□□-W series is a serial EEPROM of I2C BUS interface method  
Features  
1) Completely conforming to the world standard I2C BUS.  
All controls available by 2 ports of serial clock (SCL) and serial data(SDA)  
2) Other devices than EEPROM can be connected to the same port, saving microcontroller port  
3) 1.7V5.5V single power source action most suitable for battery use  
4) 1.7V5.5Vwide limit of action voltage, possible FAST MODE 400KHz action  
5) Page write mode useful for initial value write at factory shipment  
6) Auto erase and auto end function at data write  
7) Low current consumption  
8) Write mistake prevention function  
Write (write protect) function added  
Write mistake prevention function at low voltage  
9) DIP-T8/SOP8/SOP-J8/SSOP-B8/TSSOP-B8/TSSOP-B8J/MSOP8/VSON008X2030 various packages  
10) Data rewrite up to 1,000,000 times  
11) Data kept for 40 years  
12) Noise filter built in SCL / SDA terminal  
13) Shipment data all address FFh  
BR24T series  
Power source  
VSON008  
Capacity Bit format  
Type  
DIP-T8  
SOP8  
SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8  
Voltage  
X2030  
1Kbit  
2Kbit  
128×8  
256×8  
512×8  
1K×8  
2K×8  
4K×8  
8K×8  
BR24T01-W 1.75.5V  
BR24T02-W 1.75.5V  
BR24T04-W 1.75.5V  
BR24T08-W 1.75.5V  
BR24T16-W 1.75.5V  
BR24T32-W 1.75.5V  
BR24T64-W 1.75.5V  
4Kbit  
8Kbit  
16Kbit  
32Kbit  
64Kbit  
128Kbit 16K×8 BR24T128-W 1.75.5V  
256Kbit 32K×8 BR24T256-W 1.75.5V  
512Kbit 64K×8 BR24T512-W 1.75.5V  
1024Kbit 128K×8 BR24T1M-W 1.75.5V  
:Developing  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.03 - Rev.A  
1/21  

BR24T256FJ-WGE2 替代型号

型号 品牌 替代类型 描述 数据表
BR24T256F-WE2 ROHM

功能相似

EEPROM, 32KX8, Serial, CMOS, PDSO8, 5 X 6.20 MM, 1.71 MM HEIGHT, SOP-8
BR24T256FJ-WE2 ROHM

功能相似

EEPROM, 32KX8, Serial, CMOS, PDSO8, 4.90 X 6 MM, 1.65 MM HEIGHT, SOP-8

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