Datasheet > BR211SM

BR211SM

更新时间： 2022-11-26 11:16:13

品牌	Logo	应用领域
恩智浦 - NXP		二极管击穿二极管
页数	文件大小	规格书
6页	34K
描述
Breakover diodes

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BR211SM 数据手册

Philips Semiconductors

Preliminary specification

Breakover diodes

BR211SM series

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_TM

On-state voltage

I_TM= 2 A

2.5

V_(BR)

V_(BO)

Avalanche voltage (min)

Breakover voltage (max)

I_(BR)= 10_mA

I ≤ I_S, t_p= 100 µs

BR211SM-140

BR211SM-160

BR211SM-180

BR211SM-200

BR211SM-220

BR211SM-240

BR211SM-260

BR211SM-280

123

140

158

176

193

211

228

246

140

160

180

200

220

240

260

280

+0.1

157

180

202

224

247

269

292

314

S_(br)

Temperature coefficient of V_(BR)

Holding current

%/K

µA

I_H

T_j= 25˚C

150

100

T_j= 70˚C

I_S4

Switching current

Off-state current

t_p= 100 µs

200

1000

I_D

V_D= 85% V_(BR)min, T_j= 70˚C

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

dV_D/dt

Linear rate of rise of off-state

voltage that will not trigger any

device

V_(DM)= 85% V_(BR)min; T_j= 70 ˚C

2000 V/µs

C_j

Off-state capacitance

V_D= 0 V; f = 1 kHz to 1 MHz

100 pF

current

ITSM

100%

90%

V(BR)

I(BR)

V(BO)

50%

30%

voltage

time

Symbol

10us

700us

Symmetric BOD

Fig.1. Definition of breakover diode characteristics.

Fig.2. Test waveform for high voltage impulse (I_TSM1

)

according to CCITT vol IX-Rec K17.

1 Measured under pulsed conditions to avoid excessive dissipation

2 The minimum current at which the diode will remain in the on-state

3 The avalanche current required to switch the diode to the on-state

4 Measured at maximum recommended continuous voltage. Relative humidity < 65%.

August 1996

Rev 1.100

123 4 5 6

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