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BR211SM PDF预览

BR211SM

更新时间: 2024-02-03 11:20:58
品牌 Logo 应用领域
恩智浦 - NXP 二极管击穿二极管
页数 文件大小 规格书
6页 34K
描述
Breakover diodes

BR211SM 数据手册

 浏览型号BR211SM的Datasheet PDF文件第1页浏览型号BR211SM的Datasheet PDF文件第2页浏览型号BR211SM的Datasheet PDF文件第3页浏览型号BR211SM的Datasheet PDF文件第5页浏览型号BR211SM的Datasheet PDF文件第6页 
Philips Semiconductors  
Preliminary specification  
Breakover diodes  
BR211SM series  
Cj / pF  
100  
Zth / (K/W)  
1000  
100  
10  
BR211-140  
typ  
BR211-280  
10  
t
p
P
1
D
t
0.1  
1
0.1s  
tp / s  
10s  
1000s  
10us  
1ms  
1000  
1
10  
100  
VD / V  
Fig.9. Typical junction capacitance as a function of  
off-state voltage, f = 1 MHz; Tj = 25˚C.  
Fig.10. Transient thermal impedance. Zth j-a = f(tp).  
August 1996  
4
Rev 1.100  

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