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BP1J3P-A PDF预览

BP1J3P-A

更新时间: 2024-10-29 03:35:35
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
6页 113K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

BP1J3P-A 数据手册

 浏览型号BP1J3P-A的Datasheet PDF文件第1页浏览型号BP1J3P-A的Datasheet PDF文件第2页浏览型号BP1J3P-A的Datasheet PDF文件第4页浏览型号BP1J3P-A的Datasheet PDF文件第5页浏览型号BP1J3P-A的Datasheet PDF文件第6页 
BP1 SERIES  
BP1A3M  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 22 V, IE = 0  
MIN.  
TYP.  
MAX.  
Unit  
nA  
100  
hFE1Note 2  
hFE2Note 2  
hFE3Note 2  
VOLNote 2  
VILNote 2  
R1  
80  
100  
50  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 0.5 A  
VCE = 2.0 V, IC = 0.7 A  
VIN = 5.0 V, IC = 0.2 A  
VCE = 5.0 V, IC = 100 µA  
DC current gain  
DC current gain  
0.3  
0.4  
0.3  
1.3  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
kΩ  
kΩ  
0.7  
0.7  
1.0  
1.0  
E-to-B resistance  
R2  
1.3  
Note 2 PW 350 µs, duty cycle 2 %  
BP1F3P  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 22 V, IE = 0  
MIN.  
TYP.  
MAX.  
Unit  
nA  
100  
hFE1Note 2  
hFE2Note 2  
hFE3Note 2  
VOLNote 2  
VILNote 2  
R1  
200  
100  
50  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 0.5 A  
VCE = 2.0 V, IC = 0.7 A  
VIN = 5.0 V, IC = 0.2 A  
VCE = 5.0 V, IC = 100 µA  
DC current gain  
DC current gain  
0.4  
0.3  
2.86  
13  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
kΩ  
kΩ  
1.54  
7
2.2  
10  
E-to-B resistance  
R2  
Note 2 PW 350 µs, duty cycle 2 %  
BP1J3P  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 22 V, IE = 0  
MIN.  
TYP.  
MAX.  
Unit  
nA  
100  
hFE1Note 2  
hFE2Note 2  
hFE3Note 2  
VOLNote 2  
VILNote 2  
R1  
200  
100  
50  
470  
300  
VCE = 2.0 V, IC = 0.1 A  
VCE = 2.0 V, IC = 0.5 A  
VCE = 2.0 V, IC = 0.7 A  
VIN = 5.0 V, IC = 0.2 A  
VCE = 5.0 V, IC = 100 µA  
DC current gain  
DC current gain  
200  
0.28  
0.4  
0.3  
4.3  
Low level output voltage  
Low level input voltage  
Input resistance  
V
V
kΩ  
kΩ  
2.3  
7
3.3  
10  
E-to-B resistance  
R2  
13  
Note 2 PW 350 µs, duty cycle 2 %  
3
Data Sheet D11740EJ2V0DS  

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