Datasheet > BP1J3P-A

BP1J3P-A

更新时间： 2024-02-21 13:26:09

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	113K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BP1J3P-A 数据手册

BP1 SERIES

BP1A3M

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

100

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.2 A

V^CE= −5.0 V, I^C= −100 µA

−

DC current gain

−

DC current gain

−0.3

−0.4

−0.3

1.3

Low level output voltage

Low level input voltage

Input resistance

kΩ

0.7

1.0

E-to-B resistance

R²

1.3

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BP1F3P

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

200

100

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.2 A

V^CE= −5.0 V, I^C= −100 µA

−

DC current gain

−

DC current gain

−0.4

−0.3

2.86

Low level output voltage

Low level input voltage

Input resistance

kΩ

1.54

2.2

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BP1J3P

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

200

100

470

300

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.2 A

V^CE= −5.0 V, I^C= −100 µA

−

DC current gain

−

DC current gain

200

−0.28

−0.4

−0.3

4.3

Low level output voltage

Low level input voltage

Input resistance

kΩ

2.3

3.3

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D11740EJ2V0DS

1 234 5 6

下载PDF

与BP1J3P-A相关器件

型号	品牌	描述	获取价格	数据表
BP1L2Q	NEC	On-chip resistor PNP silicon epitaxial transistor For mid-speed switching	获取价格
BP1L2Q-A	NEC	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	获取价格
BP1L3N	NEC	On-chip resistor PNP silicon epitaxial transistor For mid-speed switching	获取价格
BP1L3N-A	NEC	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	获取价格
BP2	INFINEON	Entry & Basic Platform	获取价格
BP2.3-12	BB-BATTERY	VRLA Rechargeable Battery	获取价格