Datasheet > BP1J3P-A

BP1J3P-A

更新时间： 2024-10-29 03:35:35

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	113K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

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中文翻译

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BP1J3P-A 数据手册

BP1 SERIES

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)^{Note 1}

I^B(DC)

P^T

Ratings

−25

Unit

Collector to base volgate

Colletor to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

−25

−10

−0.7

−1.0

−0.02

250

Total power dissipation

Junction temperature

Storage temperature

°C

T^j

150

−55 to +150

T^stg

Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %

BP1A4A

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^CE(sat)^{Note 2}

V^IL^{Note 2}

R¹

200

100

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

I^C= −0.3 A, I^B= −6 mA

V^CE= −5.0 V, I^C= −100 µA

−

DC current gain

−

DC current gain

−0.28

−0.4

−0.3

−

Collector saturation voltage

Low level input voltage

Input resistance

−

Ω

kΩ

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BP1L2Q

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −22 V, I^E= 0

MIN.

TYP.

MAX.

Unit

−

−100

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

150

100

350

300

V^CE= −2.0 V, I^C= −0.1 A

V^CE= −2.0 V, I^C= −0.5 A

V^CE= −2.0 V, I^C= −0.7 A

V^IN= −5.0 V, I^C= −0.3 A

V^CE= −5.0 V, I^C= −100 µA

−

DC current gain

−

DC current gain

200

−0.30

−0.4

−0.3

611

Low level output voltage

Low level input voltage

Input resistance

Ω

329

470

4.7

kΩ

E-to-B resistance

R²

3.29

6.11

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D11740EJ2V0DS

123 4 5 6

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