Datasheet > BM29B-4DP/2-0.35V(53)

BM29B-4DP/2-0.35V(53)

更新时间： 2024-12-01 18:09:11

品牌	Logo	应用领域
广濑 - HRS		连接器
页数	文件大小	规格书
1页	80K
描述
连接器类型:插头;传输规格:USB3.1;传输速度:10.0 Gbps;开口间距:0.35 mm;安装间距:0.35 mm;嵌合高度(Min.):0.6 mm;嵌合高度(Max.):0.6 mm;

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BM29B-4DP/2-0.35V(53) 数据手册

APPLICABLE STANDARD

Operating

Storage

Temperature Range

-55C to 85C (Note 1)

-10C TO 60C

Temperature Range

Voltage

50V AC/DC

RATING

Signal contact : 0.3A

Power contact : 3.0A

Current

SPECIFICATIONS

TEST METHOD

ITEM

REQUIREMENTS

QT AT

CONSTRUCTION

General Examination

Visually and by measuring instrument.

Confirmed visually.

According to drawing.

Marking

ELECTRIC CHARACTERISTICS

Signal contact resistance: 50 mMAX.

Power contact resistance: 20 mMAX.

Contact Resistance

20mV AC or less 1kHz,1m A .

－

Insulation Resistance

Voltage Proof

100V DC.

1000 M MIN.

－

150V AC for 1 min.

No flashover or breakdown.

MECHANICAL CHARACTERISTICS

① Signal contact resistance: 50 mMAX.

30times insertions and extractions.

Mechanical Operation

Power contact resistance: 20 mMAX.

－

② No damage, crack or looseness of parts.

Frequency 10 to 55 to 10 Hz,approx 5min,

Single amplitude 0.75 mm,10cycles,

for 3 directions.

490 m/s²duration of pulse 11 ms at 3 times

for 3 directions.

① No electrical discontinuity of 1 s.

② No damage, crack or Looseness of parts.

Vibration

Shock

① No electrical discontinuity of 1 s.

② No damage, crack or looseness of parts.

－

ENVIRONMENTAL CHARACTERISTICS

① Signal contact resistance: 50 mMAX.

Power contact resistance: 20 mMAX.

② Insulation resistance: 1000M MIN.

③ No damage, crack or looseness of parts.

① Signal contact resistance: 50 mMAX.

Power contact resistance: 20 mMAX.

② Insulation resistance: 100M MIN.

③ No damage, crack or looseness of parts.

Signal contact resistance: 50 mMAX.

Temperature -55 → +85℃

Rapid Change of

Temperature

Time

Under 5 cycles.

30 → 30 min

－

(Relocation time to chanber : within 2-3 min)

Damp Heat

(Steady state)

Exposed at 40 ± 2 C, 90 to 95 , 96 h.

－

Exposed in 25 PPM for 96h,25℃,75%.

(Refer to JIS C 60068)

Sulphur Dioxide

Power contact resistance: 20 mMAX.

COUNT

DESCRIPTION OF REVISIONS

DESIGNED

RT.SHIMIZU

CHECKED

DATE

△

20240122

20210423

DIS-H-00019811

TY.OOI

REMARKS

Note1: Include the temperature rising by current

APPROVED

CHECKED

DESIGNED

DRAWN

WR.FUKUCHI

TS.MIYAZAKI

RT.OSAKI

Unless otherwise specified, refer to JIS C 5402 and IEC 60512.

Note QT:Qualification Test AT:Assurance Test X:Applicable Test

RT.OSAKI

DRAWING NO.

ELC-386725-53-01

PART NO.

CODE NO.

BM29B-4DP/2-0.35V(53)

SPECIFICATION SHEET

1/1

HIROSE ELECTRIC CO., LTD.

CL0673-7064-0-53

△

FORM HD0011-2-1

中文翻译

下载PDF

与BM29B-4DP/2-0.35V(53)相关器件

型号	品牌	获取价格	描述	数据表
BM29B-6DP/2-0.35V(51)	HRS	获取价格	连接器类型:插头;传输规格:USB3.1;传输速度:10.0 Gbps;开口间距:0.35
BM29B-6DP/2-0.35V(53)	HRS	获取价格	连接器类型:插头;传输规格:USB3.1;传输速度:10.0 Gbps;开口间距:0.35
BM29F040	FUJITSU	获取价格	4M (512K X 8) BIT
BM29F04-12AC	WINBOND	获取价格	Flash, 512KX8, 120ns, PQCC32
BM29F04-12AI	WINBOND	获取价格	Flash, 512KX8, 120ns, PQCC32
BM29F04-12NC	WINBOND	获取价格	Flash, 512KX8, 120ns, PDIP32
BM29F04-12NI	WINBOND	获取价格	Flash, 512KX8, 120ns, PDIP32
BM29F04-12TC	WINBOND	获取价格	Flash, 512KX8, 120ns, PDSO32
BM29F04-15AC	WINBOND	获取价格	Flash, 512KX8, 150ns, PQCC32
BM29F04-15AI	WINBOND	获取价格	Flash, 512KX8, 150ns, PQCC32

与BM29B-4DP/2-0.35V(53)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

BM29B-4DP/2-0.35V(53)

BM29B-4DP/2-0.35V(53) 数据手册

与BM29B-4DP/2-0.35V(53)相关器件

与BM29B-4DP/2-0.35V(53)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BM29B-4DP/2-0.35V(53)

BM29B-4DP/2-0.35V(53) 数据手册

与BM29B-4DP/2-0.35V(53)相关器件

与BM29B-4DP/2-0.35V(53)相关文章

您还可以找

您在本页遇到什么问题？