Datasheet > BM29F04-75TI

BM29F04-75TI

更新时间： 2024-09-14 03:59:47

品牌	Logo	应用领域
华邦 - WINBOND		光电二极管内存集成电路
页数	文件大小	规格书
29页	196K
描述
Flash, 512KX8, 70ns, PDSO32

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BM29F04-75TI 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.88
最长访问时间：	70 ns	命令用户界面：	YES
数据轮询：	YES	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e0
内存密度：	4194304 bit	内存集成电路类型：	FLASH
内存宽度：	8	部门数/规模：	8
端子数量：	32	字数：	524288 words
字数代码：	512000	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	512KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP32,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
电源：	5 V	认证状态：	Not Qualified
部门规模：	64K	最大待机电流：	0.0001 A
子类别：	Flash Memories	最大压摆率：	0.06 mA
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
Base Number Matches：	1

BM29F04-75TI 数据手册

BRIGHT

Microelectronics

Inc.

Preliminary BM29F040

4 MEGABIT (512K ´ 8)

5 VOLT SECTOR ERASE CMOS FLASH MEMORY

GENERAL DESCRIPTION

The BM29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as 512K ´ 8 bits each.

The BM29F040 is offered in an Industry standard 32-pin package which is backward compatible to 1

Megabit and also pin compatible to EEPROMs. The device is offered in PDIP, PLCC and TSOP

packages. The device is designed to be programmed and erased in system with the standard system

5 Volt Vcc supply. An external 12.0 Volts Vpp is not required for program and erase operation. The

device can also be reprogrammed in standard EPROM programmers.

The BM29F040 offers access times between 70 to 150 nS. The device has separate chip enable

(CE), write enable (WE ) and output enable (OE ) controls to eliminate bus contention.

BMI flash memory technology reliably stores memory information even after 100,000 erase and

program cycles. The BMI proprietary cell technology enhances the programming speeds and

™

eliminates over erase problems seen in the classical ETOX type of Flash cell technologies. The

combination of cell technology and internal circuit design techniques give reduced internal electrical

fields and this provides improved reliability and endurance. The BM29F040 is entirely pin and

command set compatible to the JEDEC standard 4 Megabit EEPROM. The commands are written to

the Command State machine using standard microprocessor write timings. The internal Programming

and Erase Algorithms are automatically implemented based on the input commands.

The BM29F040 is programmed by executing the program command sequence. This will start the

internal automatic program Algorithm that times the program pulse width and also verifies the proper

cell margin. Erase is accomplished by executing the erase command sequence. The internal Power

Switching State Machine automatically executes the algorithms and generates the necessary voltages

and timings for the erase operation. The program and erase verify is also done internally and proper

margin testing is automatically performed. This scheme unburdens the microprocessor or

microcontroller from generating the program and erase algorithms by controlling all the necessary

timings and voltages. The entire memory is typically erased in 1.5 seconds. No preprogramming is

necessary in this technology.

The BM29F040 also features a sector erase architecture. It is divided into 8 sectors of 64K bytes

each. Each sector can be erased individually without affecting the data in other sectors or they can be

erased in a random combination of groups. This multiple sector erase capability or full chip erase

makes it very flexible to alter the data in BM29F040. To protect the data from accidental program or

erase the device also has a sector protect or multiple sector protect function.

The device features a single 5 Volt power supply for read, program and erase operation. Internally

generated and well regulated voltages are provided for the program and erase operation. A low Vcc

detector inhibits write operations during power transitions. The end of program or erase is detected by

Data polling of DQ7 or by the Toggle Bit feature on DQ6. Once the program or erase cycle has been

successfully completed, the device internally resets to Read mode.

A Winbond Company

Publication Release Date: June 1999

Revision A1

- 1 -

12 3 4 5 6 7...29

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与BM29F04-75TI相关器件

型号	品牌	获取价格	描述	数据表
BM29F04-90AC	WINBOND	获取价格	Flash, 512KX8, 90ns, PQCC32
BM29F04-90AI	WINBOND	获取价格	Flash, 512KX8, 90ns, PQCC32
BM29F04-90NC	WINBOND	获取价格	Flash, 512KX8, 90ns, PDIP32
BM29F04-90NI	WINBOND	获取价格	Flash, 512KX8, 90ns, PDIP32
BM29F04-90TC	WINBOND	获取价格	Flash, 512KX8, 90ns, PDSO32
BM29F400B	ETC	获取价格	4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
BM29F400B-12TC	WINBOND	获取价格	Flash, 256KX16, 120ns, PDSO48
BM29F400B-15TC	WINBOND	获取价格	Flash, 256KX16, 150ns, PDSO48
BM29F400B-90TC	WINBOND	获取价格	Flash, 256KX16, 90ns, PDSO48,
BM29F400T	ETC	获取价格	4 MEGABIT (512K x 8/ 256K x 16) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY

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