是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
Is Samacsys: | N | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 75 V |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | L BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BLL1214-250,112 | NXP |
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BLL1214-250 |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BLL1214-250,112 | NXP |
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BLL1214-250 |
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BLL1214-250R | NXP |
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LDMOS L-band radar power transistor |
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BLL1214-250R,112 | NXP |
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BLL1214-250R |
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BLL1214-35 | NXP |
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L-band radar LDMOS driver transistor |
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BLL1214-35,112 | NXP |
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BLL1214-35 |
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BLL1461 | BELLING |
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BLL1461 series are a group of positive voltage output, high precise, and low power consump |
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BLL1575 | BELLING |
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BLL1575 series is a group of positive voltage output, low power consumption, low dropout v |
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BL-L189BC | BETLUX |
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Round Tower Type LED lamp |
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BL-L189BGC | BETLUX |
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Round Tower Type LED lamp |
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BL-L189LRC | BETLUX |
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Round Tower Type LED lamp |
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