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BLF6G27L-50BN,118 PDF预览

BLF6G27L-50BN,118

更新时间: 2024-11-19 14:32:59
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 208K
描述
BLF6G27L-50BN

BLF6G27L-50BN,118 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证:符合
生命周期:Transferred零件包装代码:DFM
针数:2Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
Base Number Matches:1

BLF6G27L-50BN,118 数据手册

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BLF6G27L-50BN;  
BLF6G27LS-50BN  
Power LDMOS transistor  
Rev. 2 — 7 April 2011  
Product data sheet  
1. Product profile  
1.1 General description  
50 W LDMOS power transistor for base station applications at frequencies from  
2500 MHz to 2700 MHz.  
Table 1.  
Typical performance  
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.  
Mode of operation  
f
IDq  
VDS  
(V)  
28  
PL(AV)  
(W)  
3
Gp  
ηD  
ACPR  
(MHz)  
(mA)  
430  
(dB)  
16.5  
(%) (dBc)  
14.5 47[1]  
2-carrier W-CDMA  
2500 to 2700  
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;  
carrier spacing 5 MHz  
1.2 Features and benefits  
„ Typical 2-carrier W-CDMA performance at frequencies of 2500 MHz and 2700 MHz, a  
supply voltage of 28 V and an IDq of 430 mA:  
‹ Average output power = 3 W  
‹ Power gain = 16.5 dB (typical)  
‹ Efficiency = 14.5 %  
‹ ACPR = 47 dBc  
„ Easy power control  
„ Integrated ESD protection  
„ Excellent ruggedness  
„ High efficiency  
„ Excellent thermal stability  
„ Designed for broadband operation (2500 MHz to 2700 MHz)  
„ Internally matched for ease of use  
„ Integrated current sense  
„ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC  
1.3 Applications  
„ RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to  
2700 MHz frequency range  
 
 
 
 
 
 

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