Datasheet > BLD122D

BLD122D

更新时间： 2024-11-06 00:04:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	145K
描述
BLD SERIES TRANSISTORS

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中文翻译

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BLD122D 数据手册

Shenzhen SI Semiconductors Co., LTD.

Product Specification

BLD SERIES TRANSISTORS

BLD122D(New*)

FEATURES

HIGH VOLTAGE CAPABILITY

HIGH SPEED SWITCHING

ELECTRONIC BALLAST

WIDE SOA

APPLICATION: FLUORESCENT LAMP

ELECTRONIC TRANSFORMER

SWITCH MODE POWER SUPPLY

Absolute Maximum Ratings Tc=25°C

TO-92

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

600

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter- Base Voltage

Collector Current

400

1.2

Total Power Dissipation

Junction Temperature

Storage Temperature

P_C

°C

150

Tstg

-65-150

Electronic Characteristics Tc=25°C

CHARACTERISTICS

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Collector-Emitter Voltage

Emitter -Base Voltage

SYMBOL

TEST CONDITION

V_CB=600V

MIN

MAX

100

UNIT

I_CBO

I_CEO

V_CE=400V,I_B=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

I_C=0.5A,I_B=0.1A

I_C=1A,I_B=0.5A

I_C=0.5A,I_B=0.1A

V_CE=5V,I_C=1mA

V_CE=10V,I_C=0.1A

V_CE=5V,I_C=1A

V_CC=5V,

250

V_CEO

400

V_EBO

0.5

0.6

1.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Vces

Vbes

DC Current Gain

h_FE

Storage Time

Falling Time

t_S

t_f

2.0

3.5

0.8

2.0

I_C=0.25A

(UI9600)

µs

Diode Forward Voltage

I_C=1A

Si semiconductors 2005.12

12 3

中文翻译

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