5秒后页面跳转
BL4-08G-LFR PDF预览

BL4-08G-LFR

更新时间: 2024-01-13 15:24:24
品牌 Logo 应用领域
FRONTIER /
页数 文件大小 规格书
2页 118K
描述
BL4-08G-LFR

BL4-08G-LFR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact ManufacturerReach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.86
Is Samacsys:N最小击穿电压:800 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PSIP-W4JESD-609代码:e0
最大非重复峰值正向电流:200 A元件数量:4
相数:1端子数量:4
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向电流:0.00001 µA
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BL4-08G-LFR 数据手册

 浏览型号BL4-08G-LFR的Datasheet PDF文件第2页 
Frontier Electronics Corp.  
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065  
TEL: (805) 522-9998 FAX: (805) 522-9989  
E-mail: frontiersales@frontierusa.com  
Web: http: //www.frontierusa.com  
4A GLASS PASSIVATED BRIDGE RECTIFIER  
BL4-005G-LFR THRU BL4-10G-LFR  
FEATURES  
z GLASS PASSIVATED CHIP JUNCTION  
z PLASTIC MATERIAL USED CARRIES UNDERWRITERS  
LABORATORY FLAMMABILITY CLASSIFICATION 94V-0  
z TYPICAL IR LESS THAN 1μA  
.149(3.8) Min.  
.826(21.0)  
.775(19.7)  
z IDEAL FOR PRINTED CIRCUIT BOARD  
z HIGH TEMPERATURE SOLDERING GUARANTEED: 260°/10S  
0.375” (9.5mm) LEAD LENGTH / 5LBS. (2.3KG) TENSION  
z SURGE OVERLOAD RATING: 200A PEAK  
z LEAD FREE  
.444(11.3)  
.413(10.5)  
+
AC  
-
.064(1.65)  
Min.  
.110(2.7)  
.063(1.6)  
.55(14)  
.51(13)  
.047(1.2)  
.031(0.8)  
.208(5.3)  
.188(4.8)  
MECHANICAL DATA  
z CASE: VOID FREE PLASTIC PACKAGE, DIMENSIONS IN INCHES  
AND (MILLIMETERS)  
z TERMINALS: AXIAL LEADS, SOLDERABLE PER MIL-STD-202  
METHOD 208  
z MOUNTING POSITION: ANY  
z WEIGHT: 3.6 GRAMS  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED  
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%  
BL4-005G BL4-01G BL4-02G BL4-04G BL4-06G BL4-08G BL4-10G  
RATINGS  
SYMBOL  
UNITS  
-LFR  
50  
-LFR  
100  
70  
-LFR  
200  
-LFR  
400  
-LFR  
600  
-LFR  
800  
-LFR  
1000  
700  
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE  
MAXIMUM RMS VOLTAGE  
VRRM  
VRMS  
VDC  
V
V
V
35  
140  
280  
420  
560  
MAXIMUM DC BLOCKING VOLTAGE  
50  
100  
200  
400  
600  
800  
1000  
MAXIMUM AVERAGE FORWARD RECTIFIED OUTPUT  
IO  
4.0  
A
CURRENT AT 40TA  
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF  
SINE-WAVE SUPERIMPOSED ON RATED LOAD  
IFSM  
150  
60  
A
RATING FOR FUSING t 8.3ms  
I2t  
A2SEC  
STORAGE TEMPERATURE RANGE  
TSTG  
TOP  
- 55 TO + 150  
- 55 TO + 125  
OPERATING TEMPERATURE RANGE  
ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)  
BL4-005G BL4-01G BL4-02G BL4-04G BL4-06G BL4-08G BL4-10G  
CHARACTERISTICS  
SYMBOL  
UNITS  
V
-LFR  
-LFR  
-LFR  
-LFR  
-LFR  
-LFR  
-LFR  
MAXIMUM FORWARD VOLTAGE DROP PER BRIDGE ELEMENT  
AT 2.0A PEAK  
VF  
IR  
1.0  
MAXIMUM REVERSE CURRENT AT RATED DC BLOCKING  
VOLTAGE PER ELEMENT  
5
μA  
BL4-005G-LFR THRU BL4-10G-LFR  
Page: 1  

与BL4-08G-LFR相关器件

型号 品牌 获取价格 描述 数据表
BL40931 ETC

获取价格

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP
BL40N25 BELLING

获取价格

BL40N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology
BL40N25 BL Galaxy Electrical

获取价格

250V, N Channel MOSFETs
BL40N30L BELLING

获取价格

BL40N30L, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technolog
BL4-10 FRONTIER

获取价格

4A BRIDGE RECTIFIER
BL4-10G FRONTIER

获取价格

4A GLASS PASSIVATED BRIDGE RECTIFIER
BL4-10G-LFR FRONTIER

获取价格

BL4-10G-LFR
BL4120WS BL Galaxy Electrical

获取价格

0.2A,120V,Surface Mount Small Signal Switching Diodes
BL4167-6L BL Galaxy Electrical

获取价格

N:2.6A, 30V, 0.9W, Dual MOSFETs P:-2.2A, -30V, 0.9W, Dual MOSFETs
BL41931 ETC

获取价格

SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP