Datasheet > BL40N25

BL40N25

更新时间： 2023-12-06 20:08:25

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1413K
描述
BL40N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL40N25 数据手册

BL40N25

Power MOSFET

1．Description

BL40N25, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

Value

250

Unit

I_D

R_DS(ON).Typ

FEATURES

0.065

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

TO-247

TO-3PN

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL40N25-F

BL40N25-W

Package

TO-247

TO-3PN

Product Code

40N25

Packing

Tube

BL40N25-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL40N25:250V 40A

(2) F:TO-247 W:TO-3PN

BL40N25

Rev 1.0

11．2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

12 3 4 5 6 7...12

下载PDF

与BL40N25相关器件

型号	品牌	描述	获取价格	数据表
BL40N30L	BELLING	BL40N30L, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technolog	获取价格
BL4-10	FRONTIER	4A BRIDGE RECTIFIER	获取价格
BL4-10G	FRONTIER	4A GLASS PASSIVATED BRIDGE RECTIFIER	获取价格
BL4-10G-LFR	FRONTIER	BL4-10G-LFR	获取价格
BL4120WS	Galaxy Microelectronics	0.2A,120V,Surface Mount Small Signal Switching Diodes	获取价格
BL4167-6L	Galaxy Microelectronics	N:2.6A, 30V, 0.9W, Dual MOSFETs P:-2.2A, -30V, 0.9W, Dual MOSFETs	获取价格