Datasheet > BL40N25

BL40N25

更新时间： 2023-12-06 20:08:25

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1413K
描述
BL40N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL40N25 数据手册

BL40N25

Power MOSFET

Figure 8 Typical Theshold Voltage vs Junction

Temperature

Figure 9 Typical Breakdown Voltage vs Junction

Temperature

Figure 10 Typical Capacitance vs Drain to

Source Voltage

Figure 11 Typical Gate Charge vs Gate to Source

Voltage

BL40N25

Rev 1.0

11．2019

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