Datasheet > BL40N25

BL40N25

更新时间： 2023-12-06 20:08:25

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1413K
描述
BL40N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL40N25 数据手册

BL40N25

Power MOSFET

4．Electrical Characteristics

at T_C= 25°C, unless otherwise specified

OFF Characteristics

Values

Typ.

Test

Conditions

Symbol

V_DSS

Parameter

Units

Min.

Max.

Drain to Source Breakdown

Voltage

V_GS=0V,

I_D=250µA

250

ΔBV_DSS/Δ

T_J

ID=250uA,

Reference25℃

Bvdss Temperature

Coefficient

V/℃

0.18

V_DS=250V,

V_GS= 0V,

Tj = 25℃

µA

Drain to Source Leakage

Current

I_DSS

V_DS=200V,

V_GS= 0V,

Tj = 125℃

Gate to Source Forward

Leakage

Gate to Source Reverse

Leakage

V_GS=+30V

V_GS=-30V

I_GSS(F)

I_GSS(R)

100

-100

ON Characteristics

Values

Typ.

Symbol

Parameter

Test Conditions

Units

Min.

Max.

Drain-to-Source On-

Resistance

VGS=10V,

ID=20A(Note4)

R_DS(ON)

V_GS(TH)

g_fs

-- 0.065 0.08

Ω

VDS = VGS,

ID = 250µA(Note4)

Gate Threshold Voltage

2.0

4.0

VDS=40V,

ID =20A(Note4)

Forward Transconductance

Dynamic Characteristics

Values

Typ.

Symbol

Parameter

Test Conditions

Units

Min.

Max.

Gate resistance

f = 1.0MHz

R_g

1.8

Ω

Input Capacitance

Output Capacitance

C_iss

C_oss

-- 3700 --

VGS = 0V

VDS = 25V

f = 1.0MHz

360

2.5

Reverse Transfer

Capacitance

C_rss

BL40N25

Rev 1.0

11．2019

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