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BL2N60D PDF预览

BL2N60D

更新时间: 2024-04-09 18:58:47
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
7页 616K
描述
2A, 600V, 2.5W, N Channel,Power MOSFETs

BL2N60D 数据手册

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Product Specification  
N-Channel Enhancement Mode MOSFET  
BL2N60I/2N60D  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently  
damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not  
implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature  
3. L=70mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C  
4. ISD≤ 2.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
ΔBVDSS  
ΔTJ  
VGS=0V,ID=250μA  
600  
-
-
V
/
ID=250UA  
-
0.4  
-
V/℃  
μA  
VDS=600V, VGS=0V  
VDS=480V,TC=125℃  
VDS=0V, VGS=30V  
VDS=0V, VGS=-30V  
VDS=VGS, ID=250μA  
VGS=10V,ID=1A,  
-
-
10  
100  
100  
-100  
4.0  
5
Zero Gate Voltage Drain Current  
IDSS  
IGSS  
-
-
-
-
Gate-body Leakage  
Forward  
Reverse  
nA  
-
-
Gate Threshold Voltage  
VGS(th)  
RDS(ON)  
gFS  
2.0  
-
-
Static drain-Source on-resistance  
Forward transconductance  
3.8  
Ω
S
VDS=50V,ID=1A (Note1)  
-
-
-
-
-
-
-
-
-
-
-
2.25  
270  
40  
-
350  
50  
7
Input Capacitance  
Ciss  
Coss  
Crss  
td(on)  
tR  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
Output Capacitance  
VDS=25V,VGS=0V,f=1.0MHz  
Reverse Transfer Capacitance  
Turn-On Delay Time  
5
10  
30  
60  
50  
60  
11  
-
Turn-On Rise Time  
25  
VDD=300V,ID=2.4A,RG=25Ω  
(Note1,2)  
Turn-Off Delay Time  
td(off)  
tf  
20  
Turn-Off Fall Time  
25  
Total Gate Charge  
Qg  
9.0  
1.6  
4.3  
VDS=480V,ID=2.4A,VGS=10V  
(Note1,2)  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
-
Maximum Continuous Drain-Source  
Diode Forward Current  
Maximum Pulsed Drain-Source  
Diode Forward Current  
Drain-Sourse Recovery Charge  
Reverse Recovery Time  
Reverse Recovery Charge  
Notes:  
ISD  
ISM  
-
-
-
-
2.0  
8.0  
A
A
VSD  
trr  
VGS=0V,ISD=2.0A  
-
-
-
-
1.4  
V
180  
0.72  
-
-
ns  
VGS=0V,ISD=2.4A,  
dIF/dt=100A/us (Note1)  
Qrr  
μC  
1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%  
2. Essentially Independent of Operating Temperature  
MTM0306A: December 2022 [1.0]  
www.gmesemi.com  
2

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