Product Specification
N-Channel Enhancement Mode MOSFET
BL2N60I/2N60D
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently
damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not
implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=70mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ΔBVDSS
ΔTJ
VGS=0V,ID=250μA
600
-
-
V
/
ID=250UA
-
0.4
-
V/℃
μA
VDS=600V, VGS=0V
VDS=480V,TC=125℃
VDS=0V, VGS=30V
VDS=0V, VGS=-30V
VDS=VGS, ID=250μA
VGS=10V,ID=1A,
-
-
10
100
100
-100
4.0
5
Zero Gate Voltage Drain Current
IDSS
IGSS
-
-
-
-
Gate-body Leakage
Forward
Reverse
nA
-
-
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
2.0
-
-
Static drain-Source on-resistance
Forward transconductance
3.8
Ω
S
VDS=50V,ID=1A (Note1)
-
-
-
-
-
-
-
-
-
-
-
2.25
270
40
-
350
50
7
Input Capacitance
Ciss
Coss
Crss
td(on)
tR
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Output Capacitance
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
Turn-On Delay Time
5
10
30
60
50
60
11
-
Turn-On Rise Time
25
VDD=300V,ID=2.4A,RG=25Ω
(Note1,2)
Turn-Off Delay Time
td(off)
tf
20
Turn-Off Fall Time
25
Total Gate Charge
Qg
9.0
1.6
4.3
VDS=480V,ID=2.4A,VGS=10V
(Note1,2)
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
-
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Sourse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Notes:
ISD
ISM
-
-
-
-
2.0
8.0
A
A
VSD
trr
VGS=0V,ISD=2.0A
-
-
-
-
1.4
V
180
0.72
-
-
ns
VGS=0V,ISD=2.4A,
dIF/dt=100A/us (Note1)
Qrr
μC
1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
MTM0306A: December 2022 [1.0]
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