Datasheet > BL30N50

BL30N50

更新时间： 2024-11-21 14:54:15

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	1368K
描述
BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL30N50 数据手册

BL30N50

Power MOSFET

1．Description

BL30N50, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance

the avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

500

Unit

R_DS(ON).Typ

Qg._Typ

0.088

150

Ω

FEATURES



Fast Switching

Low Crss (typical 30pF )

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL30N50-W

BL30N50-F

Package

TO-3PN

TO-247

Product Code

BL30N50

Packing

Tube

BL30N50-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL30N50:500V 30A

(2) W:TO-3PN F:TO-247

BL30N50

Rev 1.0

4/2019

www.belling.com.cn

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